Evaluation and Control of Break-Even Time of Nonvolatile Static Random Access Memory Based on Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions

2012 ◽  
Vol 51 (4R) ◽  
pp. 040212 ◽  
Author(s):  
Yusuke Shuto ◽  
Shuu'ichirou Yamamoto ◽  
Satoshi Sugahara
SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440024 ◽  
Author(s):  
QINLI MA ◽  
ATSUSHI SUGIHARA ◽  
KAZUYA SUZUKI ◽  
XIANMIN ZHANG ◽  
TERUNOBU MIYAZAKI ◽  
...  

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.


2007 ◽  
Vol 19 (16) ◽  
pp. 165209 ◽  
Author(s):  
Zhitao Diao ◽  
Zhanjie Li ◽  
Shengyuang Wang ◽  
Yunfei Ding ◽  
Alex Panchula ◽  
...  

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