Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

Fabrication of ZnO nanowires (NWs) by thermal oxidation method has been studied in this work. The ZnO NWs have been grown by oxidation of Zn metal foil under oxygen environment for two typical oxidation durations. We have investigated the behavior of the as-grown ZnO NWs with the change in oxidation duration at particular temperature. The changes in surface morphology and chemical composition with the variation of oxidation duration have been analyzed by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) respectively. From EDS spectra, it is confirmed that Zn metal has completely oxidized into ZnO for higher oxidation duration. In this work, the optimized duration of oxidation for growth of ZnO NWs is found to be ~60 minutes at particular temperature of 600oC. The present method provides a possible mechanism for the growth of ZnO NWs on the p-Si substrates.

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Fabrication and characterization of hexagonally assembled ZnO and ZnO:N thin films with buffer layer by pulsed-laser deposition

10.1117/12.589534 ◽

2005 ◽

Author(s):

Takenori Osada ◽

Takeshi Okato ◽

Minoru Obara

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Buffer Layer ◽

Pulsed Laser ◽

Laser Deposition ◽

Fabrication And Characterization

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Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge∕Si[sub 1−x]Ge[sub x]∕Si substrates with Al[sub 2]O[sub 3] gate dielectric

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2835061 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1182 ◽

Cited By ~ 2

Author(s):

D. Shahrjerdi ◽

N. Nuntawong ◽

G. Balakrishnan ◽

D. I. Garcia-Gutierrez ◽

A. Khoshakhlagh ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Substrates ◽

Fabrication And Characterization

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Fabrication and characterization of normal-incidence p-i-n InGaAs photodetectors grown on Si substrates

10.14711/thesis-b1165772 ◽

2011 ◽

Author(s):

Yan Gao

Keyword(s):

Normal Incidence ◽

Si Substrates ◽

Fabrication And Characterization

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Fabrication and characterization of poly(triazine dithiol) thin films using a two-step deposition/ photopolymerization process and micropattern

e-Polymers ◽

10.1515/epoly.2012.12.1.221 ◽

2012 ◽

Vol 12 (1) ◽

Author(s):

Rongbin Ye ◽

Mamoru Baba ◽

Koji Ohta ◽

Kazunori Suzuki ◽

Kunio Mori

Keyword(s):

Thin Films ◽

Disulfide Bonds ◽

Polymerization Rate ◽

Ex Situ ◽

Thiol Groups ◽

Si Substrates ◽

Photo Polymerization ◽

Ft Ir ◽

Fabrication And Characterization

AbstractIn this study, polymer thin films were prepared and patterned by vapor deposition photo-polymerization of 6-diallylamino-[1,3,5]-triazine-2,4-dithiol) on SiO2/Si substrates. The characterizations of these films were investigated using FT-IR-RAS, XPS, optical microscopy and AFM. The polymerization rate of 0.10 ~ 0.14 min-1 was obtained by an ex-situ FT-IR-RAS study. The structure characterized with XPS showed that the polymer films contained disulfide bonds produced by thiol groups, and monosulfide bonds produced by the reaction between allyl and thiol groups and formed network chains. Furthermore, the 2.19 μm pattern of lines and spaces was developed sufficiently by optical observation

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