Fabrication and characterization of poly(triazine dithiol) thin films using a two-step deposition/ photopolymerization process and micropattern

e-Polymers ◽  
2012 ◽  
Vol 12 (1) ◽  
Author(s):  
Rongbin Ye ◽  
Mamoru Baba ◽  
Koji Ohta ◽  
Kazunori Suzuki ◽  
Kunio Mori
Keyword(s):  
Thin Films ◽  
Disulfide Bonds ◽  
Polymerization Rate ◽  
Ex Situ ◽  
Thiol Groups ◽  
Si Substrates ◽  
Photo Polymerization ◽  
Ft Ir ◽  
Fabrication And Characterization

AbstractIn this study, polymer thin films were prepared and patterned by vapor deposition photo-polymerization of 6-diallylamino-[1,3,5]-triazine-2,4-dithiol) on SiO2/Si substrates. The characterizations of these films were investigated using FT-IR-RAS, XPS, optical microscopy and AFM. The polymerization rate of 0.10 ~ 0.14 min-1 was obtained by an ex-situ FT-IR-RAS study. The structure characterized with XPS showed that the polymer films contained disulfide bonds produced by thiol groups, and monosulfide bonds produced by the reaction between allyl and thiol groups and formed network chains. Furthermore, the 2.19 μm pattern of lines and spaces was developed sufficiently by optical observation

FABRICATION AND CHARACTERIZATION OF HYDROGEN SENSORS BASED ON TRANSFERRED GRAPHENE SYNTHESIZED BY ANNEALING OF Ni/3C-SiC THIN FILMS

2014 ◽  
Vol 21 (04) ◽  
pp. 1450050 ◽  
Author(s):  
KANG-SAN KIM ◽  
GWIY-SANG CHUNG
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Pt Nanoparticles ◽  
Annealing Process ◽  
Pd Catalyst ◽  
Response Factor ◽  
Hydrogen Sensors ◽  
Si Substrates ◽  
Fabrication And Characterization

This paper presents the formation of graphene and its application to hydrogen sensors. In this work, the graphene was synthesized by annealing process of 3 C - SiC thin films with Ni transition layer. The Ni film was coated on a 3 C - SiC layer grown thermal oxided Si substrates and used extracts of the substrate's carbon atoms under rapid thermal annealing (RTA). Various parameters such as ramping speed, annealing time and cooling rate were evaluated for the optimized combination allowed for the reproducible synthesis of graphene using 3 C - SiC thin films. Transfer process performed by Ni layer etching in HF solution and transferred graphene onto SiO 2 shows the IG/ID ratio of 2.73. Resistivity hydrogen sensors were fabricated and evaluated with Pd and Pt nanoparticles in the room temperature with hydrogen range of 10–50 ppm. The response factor of devices with the Pd catalyst was 1.3 when exposed to 50 ppm hydrogen and it is able to detect as low as 10 ppm hydrogen at room temperature.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Fabrication and Characterization of ALD-grown ZrO2:Ge Thin Films on Si(1 0 0) using CpZr(NMe2)3and (NMe2)2Ge(ipr2en) Precursors with Ozone

2015 ◽  
Vol 36 (8) ◽  
pp. 2162-2165
Author(s):  
Jae-Sun Jung ◽  
Dae-Hyun Kim ◽  
Jin-Ho Shin ◽  
Jung-Soo Kang ◽  
Joseph P. Thomas ◽  
...  
Keyword(s):  
Thin Films ◽  
Fabrication And Characterization

Fabrication and Characterization of an Ultrasensitive Humidity Sensor Based on Chalcogenide Glassy Alloy Thin Films

2021 ◽  
Author(s):  
Surabhi Mishra ◽  
◽  
Priyanka Chaudhary ◽  
B. C. Yadav ◽  
Ahmad Umar ◽  
...  
Keyword(s):  
Thin Films ◽  
Humidity Sensor ◽  
Glassy Alloy ◽  
Fabrication And Characterization
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