Fabrication and characterization of normal-incidence p-i-n InGaAs photodetectors grown on Si substrates

2011 ◽  
Author(s):  
Yan Gao
Keyword(s):  
Normal Incidence ◽  
Si Substrates ◽  
Fabrication And Characterization

Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

2017 ◽  
Vol 56 (10S) ◽  
pp. 10PF09 ◽  
Author(s):  
Naoya Oshima ◽  
Kiyoshi Uchiyama ◽  
Yoshitaka Ehara ◽  
Takahiro Oikawa ◽  
Daichi Ichinose ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Si Substrates ◽  
Fabrication And Characterization

Fabrication and characterization of Er silicates on SiO2/Si substrates

2009 ◽  
Vol 95 (4) ◽  
pp. 041906 ◽  
Author(s):  
X. J. Wang ◽  
T. Nakajima ◽  
H. Isshiki ◽  
T. Kimura
Keyword(s):  
Si Substrates ◽  
Fabrication And Characterization

Fabrication and Characterization of ZnO Nanowires by Thermal Oxidation Method

2012 ◽  
Vol 585 ◽  
pp. 124-128 ◽  
Author(s):  
Divya Somvanshi ◽  
Satyabrata Jit
Keyword(s):  
Electron Microscope ◽  
Thermal Oxidation ◽  
Present Method ◽  
Zno Nanowires ◽  
Metal Foil ◽  
Oxidation Method ◽  
Si Substrates ◽  
Fabrication And Characterization ◽  
Scanning Electron

Fabrication of ZnO nanowires (NWs) by thermal oxidation method has been studied in this work. The ZnO NWs have been grown by oxidation of Zn metal foil under oxygen environment for two typical oxidation durations. We have investigated the behavior of the as-grown ZnO NWs with the change in oxidation duration at particular temperature. The changes in surface morphology and chemical composition with the variation of oxidation duration have been analyzed by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) respectively. From EDS spectra, it is confirmed that Zn metal has completely oxidized into ZnO for higher oxidation duration. In this work, the optimized duration of oxidation for growth of ZnO NWs is found to be ~60 minutes at particular temperature of 600oC. The present method provides a possible mechanism for the growth of ZnO NWs on the p-Si substrates.

Fabrication and characterization of poly(triazine dithiol) thin films using a two-step deposition/ photopolymerization process and micropattern

e-Polymers ◽  
2012 ◽  
Vol 12 (1) ◽  
Author(s):  
Rongbin Ye ◽  
Mamoru Baba ◽  
Koji Ohta ◽  
Kazunori Suzuki ◽  
Kunio Mori
Keyword(s):  
Thin Films ◽  
Disulfide Bonds ◽  
Polymerization Rate ◽  
Ex Situ ◽  
Thiol Groups ◽  
Si Substrates ◽  
Photo Polymerization ◽  
Ft Ir ◽  
Fabrication And Characterization

AbstractIn this study, polymer thin films were prepared and patterned by vapor deposition photo-polymerization of 6-diallylamino-[1,3,5]-triazine-2,4-dithiol) on SiO2/Si substrates. The characterizations of these films were investigated using FT-IR-RAS, XPS, optical microscopy and AFM. The polymerization rate of 0.10 ~ 0.14 min-1 was obtained by an ex-situ FT-IR-RAS study. The structure characterized with XPS showed that the polymer films contained disulfide bonds produced by thiol groups, and monosulfide bonds produced by the reaction between allyl and thiol groups and formed network chains. Furthermore, the 2.19 μm pattern of lines and spaces was developed sufficiently by optical observation

FABRICATION AND CHARACTERIZATION OF HYDROGEN SENSORS BASED ON TRANSFERRED GRAPHENE SYNTHESIZED BY ANNEALING OF Ni/3C-SiC THIN FILMS

2014 ◽  
Vol 21 (04) ◽  
pp. 1450050 ◽  
Author(s):  
KANG-SAN KIM ◽  
GWIY-SANG CHUNG
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Pt Nanoparticles ◽  
Annealing Process ◽  
Pd Catalyst ◽  
Response Factor ◽  
Hydrogen Sensors ◽  
Si Substrates ◽  
Fabrication And Characterization

This paper presents the formation of graphene and its application to hydrogen sensors. In this work, the graphene was synthesized by annealing process of 3 C - SiC thin films with Ni transition layer. The Ni film was coated on a 3 C - SiC layer grown thermal oxided Si substrates and used extracts of the substrate's carbon atoms under rapid thermal annealing (RTA). Various parameters such as ramping speed, annealing time and cooling rate were evaluated for the optimized combination allowed for the reproducible synthesis of graphene using 3 C - SiC thin films. Transfer process performed by Ni layer etching in HF solution and transferred graphene onto SiO 2 shows the IG/ID ratio of 2.73. Resistivity hydrogen sensors were fabricated and evaluated with Pd and Pt nanoparticles in the room temperature with hydrogen range of 10–50 ppm. The response factor of devices with the Pd catalyst was 1.3 when exposed to 50 ppm hydrogen and it is able to detect as low as 10 ppm hydrogen at room temperature.

Design, fabrication, and characterization of broadband multilayer mirrors for EUV optics at normal incidence

2000 ◽  
Author(s):  
Zhanshan Wang ◽  
Changjun Kun ◽  
Yueying Ma ◽  
Bin Chen ◽  
Jianlin Cao ◽  
...  
Keyword(s):  
Normal Incidence ◽  
Multilayer Mirrors ◽  
Fabrication And Characterization

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

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