Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FS04 ◽  
Author(s):  
Taketo Aihara ◽  
Takeshi Tayagaki ◽  
Yuki Nagato ◽  
Yoshinobu Okano ◽  
Takeyoshi Sugaya
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

scholarly journals Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells

2015 ◽  
Vol 5 (3) ◽  
pp. 840-845 ◽  
Author(s):  
Inigo Ramiro ◽  
Juan Villa ◽  
Phu Lam ◽  
Sabina Hatch ◽  
Jiang Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Wide Bandgap ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

scholarly journals Improved Open-Circuit Voltage and Photovoltaic Properties of ZnTeO-Based Intermediate Band Solar Cells With n-Type ZnS Layers

2017 ◽  
Vol 7 (4) ◽  
pp. 1024-1030 ◽  
Author(s):  
Tooru Tanaka ◽  
Kin Man Yu ◽  
Yuuki Okano ◽  
Shuji Tsutsumi ◽  
Shin Haraguchi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

scholarly journals Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Tandem Solar Cells ◽  
Carrier Lifetimes

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

Sign in / Sign up

Export Citation Format

Share Document