scholarly journals Improved Open-Circuit Voltage and Photovoltaic Properties of ZnTeO-Based Intermediate Band Solar Cells With n-Type ZnS Layers

2017 ◽  
Vol 7 (4) ◽  
pp. 1024-1030 ◽  
Author(s):  
Tooru Tanaka ◽  
Kin Man Yu ◽  
Yuuki Okano ◽  
Shuji Tsutsumi ◽  
Shin Haraguchi ◽  
...  
2018 ◽  
Vol 57 (4S) ◽  
pp. 04FS04 ◽  
Author(s):  
Taketo Aihara ◽  
Takeshi Tayagaki ◽  
Yuki Nagato ◽  
Yoshinobu Okano ◽  
Takeyoshi Sugaya

2018 ◽  
Vol 9 ◽  
pp. 1802-1808 ◽  
Author(s):  
Katherine Atamanuk ◽  
Justin Luria ◽  
Bryan D Huey

The nanoscale optoelectronic properties of materials can be especially important for polycrystalline photovoltaics including many sensor and solar cell designs. For thin film solar cells such as CdTe, the open-circuit voltage and short-circuit current are especially critical performance indicators, often varying between and even within individual grains. A new method for directly mapping the open-circuit voltage leverages photo-conducting AFM, along with an additional proportional-integral-derivative feedback loop configured to maintain open-circuit conditions while scanning. Alternating with short-circuit current mapping efficiently provides complementary insight into the highly microstructurally sensitive local and ensemble photovoltaic performance. Furthermore, direct open-circuit voltage mapping is compatible with tomographic AFM, which additionally leverages gradual nanoscale milling by the AFM probe essentially for serial sectioning. The two-dimensional and three-dimensional results for CdTe solar cells during in situ illumination reveal local to mesoscale contributions to PV performance based on the order of magnitude variations in photovoltaic properties with distinct grains, at grain boundaries, and for sub-granular planar defects.


2016 ◽  
Vol 157 ◽  
pp. 126-133 ◽  
Author(s):  
Baoyuan Wang ◽  
Yixiao Cai ◽  
Wenjing Dong ◽  
Chen Xia ◽  
Wei Zhang ◽  
...  

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Sayeda Anika Amin ◽  
Md. Tanvir Hasan ◽  
Muhammad Shaffatul Islam

In0.53Ga0.47As/GaAs-based quantum dot intermediate band solar cells (QDIBSCs) have been designed and optimized for the next generation photovoltaic technology. The wave behavior of charge carriers inside the dot and their barrier have been analyzed with different dot sizes and interdot spacing. The device characteristics such as short circuit current density, Jsc, open circuit voltage, Voc, and conversion efficiency, η, have been evaluated. Based on the behavior of electron wave function, it is found that varying the dot spacing leads to a change in the IB width and in the density of states, whereas varying the size of dots leads to a formation of a second IB. For a fixed dot spacing, two ranges of dot sizes vary the number of IBs in In0.53Ga0.47As/GaAs QDIBSC. Smaller dots of a size ranging from 2 nm to 5 nm form a single IB while larger dots of a size ranging from 6 nm to 9 nm can produce 2 IBs. The efficiency of 2 IBs close to 1 IB suggests that formation of multiple IBs can possibly enhance the device efficiency.


Energies ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 6021
Author(s):  
Jongwon Lee

It is necessary to devise innovative techniques to design new high-performance tandem solar cells to meet increasing energy needs. In this study, the theoretical efficiency of intermediate band solar cells (IBSCs) was increased by integrating them with tandem solar cells to produce intermediate band tandem solar cells (IBTSCs). The spectral splitting analysis indicated that the efficient absorption of sub-photon energies was necessary to ensure optimal performance of the IBSCs at each junction of the IBTSC. For this calculation, we assumed all absorption of sub-photon energies are unity. In addition, we applied the variation of absorptivity to the detailed balance limit of a double-junction (DJ) IBTSC. Furthermore, we included the impact of series and shunt resistances of a typical DJ IBTSC to investigate the variations in electrical parameters (short circuit current, open circuit voltage). The performance efficiency also depended on the illumination concentration due to the charge carrier transitions at each junction. We analyzed this aspect to determine the overall performance of the IBTSCs. We replaced the IBSC in the bottom junction with a single-junction solar cell to explore the potential of diverse tandem configurations. DJ IBTSCs achieved a limiting efficiency comparable to that of six-junction solar cells, despite the lower number of junctions. It was challenging for these cells to exhibit optimal performance because of the inefficient spectrum management in the bottom junction. It was concluded that full illumination concentration was required to achieve optimal performance in both junctions of the IBTSC.


2019 ◽  
Vol 7 (14) ◽  
pp. 8218-8225 ◽  
Author(s):  
Daniel Prochowicz ◽  
Mohammad Mahdi Tavakoli ◽  
Abul Kalam ◽  
Rohit D. Chavan ◽  
Suverna Trivedi ◽  
...  

The effect of rubidium and guanidinium additives on the morphological, optoelectronic and photovoltaic properties of the state-of-the-art triple A-cation based PSCs is investigated.


2017 ◽  
Vol 866 ◽  
pp. 350-353
Author(s):  
Viruntachar Kruefu ◽  
Chanitpa Khantha ◽  
Jatuphorn Wootthikanokkhan ◽  
Sukon Phanichphant

The synthesis, characterizations, and photovoltaic studies of copolymer based on 4,4-dodecylpentaleno[1,2-b]dithiophene (PC12PDT) and 5-octyl-5H-thieno[3,4-c]pyrrole-4,6-dione (TPD) were described. The PC12PDTTPD copolymer achieved a high open circuit voltage (Voc) of ~ 0.8-0.9 V. Bulk-heterojunction (BHJ) solar cells were fabricated by using chlorobenzene with 1% chloronapthalene as the solvent additive. The ZnO nanoparticles, produced by flame spray pyrolysis (FSP), were dispersed in 1-butanol. After that, it was loaded into the devices along with [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) used as the electron acceptor. From the results, it was found that the ZnO nanoparticles with different amount had the effect on the power conversion efficiency (PCE) of the solar cells. The PCE obtained in this study (3.33%) was found in the 5.45 wt% ZnO loaded device. This was an improvement as compared to that of the standard device (2.45%).


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