Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

2018 ◽  
Vol 57 (6S1) ◽  
pp. 06HD03 ◽  
Author(s):  
Yongxun Liu ◽  
Hiroyuki Tanaka ◽  
Norio Umeyama ◽  
Kazuhiro Koga ◽  
Sommawan Khumpuang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cost Effective ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Piezoresistive Effect

Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator

2009 ◽  
Vol 48 (9) ◽  
pp. 091201
Author(s):  
Jong Pil Kim ◽  
Jae Young Song ◽  
Sang Wan Kim ◽  
Jae Hyun Park ◽  
Woo Young Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor

Hall Factor in Ultrathin-Body Silicon-on-Insulator n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

2010 ◽  
Vol 49 (4) ◽  
pp. 04DC23 ◽  
Author(s):  
Shigeki Kobayashi ◽  
Masumi Saitoh ◽  
Yukio Nakabayshi ◽  
Takamitsu Ishihara ◽  
Toshinori Numata ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Hall Factor
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