X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Rare Metals ◽

10.1007/s12598-020-01586-z ◽

2020 ◽

Author(s):

Yu-Dong Li ◽

Qing-Zhu Zhang ◽

Fan-Yu Liu ◽

Zhao-Hao Zhang ◽

Feng-Yuan Zhang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

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Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.2678 ◽

1992 ◽

Vol 31 (Part 1, No. 9A) ◽

pp. 2678-2681 ◽

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Flat Band ◽

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Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.024106 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 024106 ◽

Author(s):

Anil Kumar ◽

Tomoko Mizutani ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Length ◽

Fully Depleted ◽

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Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2668 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2668-2671 ◽

Author(s):

Rihito Kuroda ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Accumulation Mode

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Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate

Journal of Applied Physics ◽

10.1063/1.2138380 ◽

2005 ◽

Vol 98 (11) ◽

pp. 114506 ◽

Author(s):

N. Lukyanchikova ◽

N. Garbar ◽

A. Smolanka ◽

M. Lokshin ◽

E. Simoen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Back Gate ◽

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New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

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A Subthreshold Current Model of Fully-Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Field Effect Transistors with Vertical Gaussian Profile

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.024301 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 024301 ◽

Author(s):

Guohe Zhang ◽

Kebin Chen ◽

Feng Liang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Subthreshold Current ◽

Gaussian Profile

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Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3110 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3110-3116 ◽

Author(s):

Weitao Cheng ◽

Akinobu Teramoto ◽

Masaki Hirayama ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Accumulation Mode

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Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.024106 ◽

2012 ◽

Vol 51 ◽

pp. 024106 ◽

Author(s):

Anil Kumar ◽

Tomoko Mizutani ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Length ◽

Fully Depleted ◽

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Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.1699496 ◽

2004 ◽

Vol 95 (12) ◽

pp. 7954-7960 ◽

Author(s):

M. J. Gilbert ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Three Dimensional Modeling ◽

Dimensional Modeling

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