Metalorganic vapor phase epitaxial growth of AlGaN directly on reactive-ion etching-treated GaN surfaces to prepare AlGaN/GaN heterostructures with high electron mobility (∼1500 cm2 V−1 s−1): Impacts of reactive-ion etching-damaged layer removal

2018 ◽  
Vol 57 (12) ◽  
pp. 125501 ◽  
Author(s):  
Akio Yamamoto ◽  
Keito Kanatani ◽  
Shinya Makino ◽  
Masaaki Kuzuhara
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Electron Mobility ◽  
Reactive Ion Etching ◽  
High Electron ◽  
Ion Etching ◽  
High Electron Mobility ◽  
Layer Removal

Metalorganic Vapor Phase Epitaxial Growth for High Electron Mobility Transistor LSIs

1992 ◽  
Vol 31 (Part 2, No. 7A) ◽  
pp. L826-L828 ◽  
Author(s):  
Tatsuya Ohori ◽  
Nobuaki Tomesakai ◽  
Masahisa Suzuki ◽  
Kazumi Kasai ◽  
Junji Komeno
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors

2020 ◽  
Vol 534 ◽  
pp. 125511 ◽  
Author(s):  
Stefano Leone ◽  
Roberto Fornari ◽  
Matteo Bosi ◽  
Vincenzo Montedoro ◽  
Lutz Kirste ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

2019 ◽  
Vol 125 (23) ◽  
pp. 235701 ◽  
Author(s):  
Stefano Leone ◽  
Fouad Benkhelifa ◽  
Lutz Kirste ◽  
Christian Manz ◽  
Ruediger Quay ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Growth Optimization
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