Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

2017 ◽  
Vol 57 (1S) ◽  
pp. 01AD01 ◽  
Author(s):  
Atsushi Yamada ◽  
Tetsuro Ishiguro ◽  
Junji Kotani ◽  
Norikazu Nakamura
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Spacer Layer

Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

2003 ◽  
Vol 47 (6) ◽  
pp. 1075-1079 ◽  
Author(s):  
M.A. Mastro ◽  
D. Tsvetkov ◽  
V. Soukhoveev ◽  
A. Usikov ◽  
V. Dmitriev ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate

2010 ◽  
Vol 7 (10) ◽  
pp. 2412-2414 ◽  
Author(s):  
Subramaniam Arulkumaran ◽  
Ng Geok Ing ◽  
Vicknesh Sahmuganathan ◽  
Liu Zhihong ◽  
Bryan Maung
Keyword(s):  
Electron Mobility ◽  
Silicon Substrate ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Spacer Layer
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