Effect of Long Term Stress on Hot Electron Trapping

1981 ◽  
Vol 20 (S1) ◽  
pp. 255 ◽  
Author(s):  
Heihachi Matsumoto ◽  
Kokichi Sawada ◽  
Sotoju Asai ◽  
Makoto Hirayama ◽  
Koichi Nagasawa
Keyword(s):  
Electron Trapping ◽  
Hot Electron

Effect of Long Term Stress on Hot Electron Trapping

1980 ◽  
Author(s):  
H. MATSUMOTO ◽  
K. SAWADA ◽  
S. ASAI ◽  
M. HIRAYAMA ◽  
K. NAGASAWA
Keyword(s):  
Electron Trapping ◽  
Hot Electron

Effect of long-term stress on IGFET degradations due to hot electron trapping

1981 ◽  
Vol 28 (8) ◽  
pp. 923-928 ◽  
Author(s):  
H. Matsumoto ◽  
K. Sawada ◽  
S. Asai ◽  
M. Hirayama ◽  
K. Nagasawa
Keyword(s):  
Electron Trapping ◽  
Hot Electron

Prospects of Time-Resolved Photon Emission as a Debug Tool

2002 ◽  
Author(s):  
Jim Vickers ◽  
Nader Pakdaman ◽  
Steven Kasapi
Keyword(s):  
Photon Emission ◽  
Photon Counting ◽  
Signal Propagation ◽  
General Function ◽  
Hot Electron ◽  
Detector Performance ◽  
Time Resolved ◽  
Switching Event ◽  
Emission System

Abstract Dynamic hot-electron emission using time-resolved photon counting can address the long-term failure analysis and debug requirements of the semiconductor industry's advanced devices. This article identifies the detector performance parameters and components that are required to scale and keep pace with the industry's requirements. It addresses the scalability of dynamic emission with the semiconductor advanced device roadmap. It is important to understand the limitations to determining that a switching event has occurred. The article explains the criteria for event detection, which is suitable for tracking signal propagation and looking for logic or other faults in which timing is not critical. It discusses conditions for event timing, whose goal is to determine accurately when a switching event has occurred, usually for speed path analysis. One of the uses of a dynamic emission system is to identify faults by studying the emission as a general function of time.

Carbon doping effects on hot electron trapping

2002 ◽  
Author(s):  
H. Haddad ◽  
L. Forbes ◽  
P. Burke ◽  
W. Richling
Keyword(s):  
Carbon Doping ◽  
Electron Trapping ◽  
Hot Electron ◽  
Doping Effects

P-well bias dependence of electron trapping in gate oxide of n-MOSFETs during substrate hot-electron injection

1992 ◽  
Vol 28 (22) ◽  
pp. 2080 ◽  
Author(s):  
S.P. Zhao ◽  
S. Taylor ◽  
W. Eccleston ◽  
S.P. Zhao
Keyword(s):  
Gate Oxide ◽  
Electron Injection ◽  
Electron Trapping ◽  
Hot Electron ◽  
Hot Electron Injection

Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening

2019 ◽  
Vol 30 (30) ◽  
pp. 305701 ◽  
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electron Trapping
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