Gas Source MBE Growth of High-quality InxGa1-xAs

1986 ◽  
Author(s):  
Yoshihiro Kawaguchi ◽  
Hajime Asahi ◽  
Haruo Nagai
Keyword(s):  
High Quality ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Mechanism of Metalorganic MBE Growth of High Quality AlN on Si (111).

2004 ◽  
Vol 831 ◽  
Author(s):  
I. Gherasoiu ◽  
S. Nikishin ◽  
G. Kipshidze ◽  
B. Borisov ◽  
A. Chandolu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Parameters ◽  
In Situ Monitoring ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mbe Growth ◽  
Gas Source ◽  
Surface Hydrogen ◽  
Nitrogen Bonds ◽  
Gas Source Mbe

ABSTRACTAlN constitutes the buffer layer of choice for the growth of GaN on all common substrates and its crystalline quality and surface morphology determine many of the properties of the overgrown epitaxial structure. This work systematically investigates the MOMBE growth of high quality AlN on Si (111) using trimethylaluminum and ammonia as sources of aluminum and nitrogen, respectively. Metalorganic MBE represents a hybrid growth technique that offers a combination of growth precision, in-situ monitoring and ease of source management with the promise of high material quality. We demonstrate very efficient growth, with the growth rate in excess of 500 nm/h and low ammonia consumption of less than 1 sccm. Over the entire domain of growth parameters, the surface roughness remained in the range from 12 to 53 Å rms for AlN layers up to 1000 nm thick. Here, the low values of the roughness are associated to the low growth temperature (760 °C), behavior that contrasts with that usually observed in gas source MBE with elemental Al source. X-ray diffraction linewidth as narrow as 141 arcsec has been demonstrated for samples grown under stoichiometric conditions. High temperature of the ammonia injector promotes the transition to the two-dimensional growth, while reducing the growth rate, pointing out the importance of surface hydrogen. We demonstrate that hydrogen plays an important role in the MOMBE process acting as a surfactant and passivating surface nitrogen bonds.

Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine

1985 ◽  
Vol 24 (Part 2, No. 4) ◽  
pp. L221-L223 ◽  
Author(s):  
Yoshihiro Kawaguchi ◽  
Hajime Asahi ◽  
Haruo Nagai
Keyword(s):  
High Quality ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

1997 ◽  
Vol 175-176 ◽  
pp. 150-155 ◽  
Author(s):  
K. Iwata ◽  
H. Asahi ◽  
K. Asami ◽  
S. Gonda
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Rich Side

Gas source MBE growth of TlInGaAs/InP DH structures for the application to WDM optical fiber communication systems

2001 ◽  
Vol 227-228 ◽  
pp. 307-312 ◽  
Author(s):  
H. Asahi ◽  
K. Konishi ◽  
O. Maeda ◽  
A. Ayabe ◽  
H.J. Lee ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Communication Systems ◽  
Optical Fiber Communication ◽  
Fiber Communication ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas source MBE growth of InP under in-rich conditions

2005 ◽  
Author(s):  
Tsuen-Lin Lee ◽  
Jin-Shang Liu ◽  
Hao-Hsiung Lin
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

1999 ◽  
Vol 25 (1-2) ◽  
pp. 477-479 ◽  
Author(s):  
J.L. Liu ◽  
S.J. Cai ◽  
G.L. Jin ◽  
Y.S. Tang ◽  
K.L. Wang
Keyword(s):  
Si Substrate ◽  
Mbe Growth ◽  
Gas Source ◽  
Nano Wires ◽  
Gas Source Mbe

New semiconductors TlInGaP and their gas source MBE growth

1997 ◽  
Vol 175-176 ◽  
pp. 1195-1199 ◽  
Author(s):  
H. Asahi ◽  
M. Fushida ◽  
K. Yamamoto ◽  
K. Iwata ◽  
H. Koh ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe
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