Characterization of GaAs/AlAs Interface Structure by High Resolution Transmission Electron Microscopy

1987 ◽  
Author(s):  
Tomoji NAKAMURA ◽  
Minoru IKEDA ◽  
Syunichi MUTO
2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.


2009 ◽  
Vol 15 (S2) ◽  
pp. 368-369 ◽  
Author(s):  
S Duarte ◽  
A Avishai ◽  
A Sadan

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009


Sign in / Sign up

Export Citation Format

Share Document