Determination of interface structure and atomic arrangements for strained InAs/Ga1−xInxSb superlattices by high-resolution transmission electron microscopy

2010 ◽  
Vol 108 (6) ◽  
pp. 064508 ◽  
Author(s):  
Maohua Quan ◽  
Fengyun Guo ◽  
Meicheng Li ◽  
Liancheng Zhao
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Interface Structure ◽  
Transmission Electron

Interface Structure and Layer Synthesis Modes in Mesotaxial Si/CoSi2/Si Structures

1990 ◽  
Vol 183 ◽  
Author(s):  
R. Hull ◽  
Y. F. Hsieh ◽  
K. T. Short ◽  
A. E. White ◽  
D. Cherns
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Lattice Parameter ◽  
Interface Structure ◽  
Interfacial Structure ◽  
Parameter Mismatch ◽  
Alternative Method ◽  
Transmission Electron

AbstractWe report observations of interfacial structure and consequences for layer synthesis modes in mesotaxial Si/CoSi2/Si structures, as deduced from high resolution transmission electron microscopy (HRTEM). It is argued that relative crystal misalignments arising from the lattice parameter mismatch between the Si and CoSi2 may render classic rigid shift measurements of interfacial structure inaccurate. An alternative method for determining interfacial structure at threedimensional precipitates by analyzing crystal stacking sequences is demonstrated.

Theoretical and Experimental Description of Interface Structure

1986 ◽  
Vol 77 ◽  
Author(s):  
R. Hull ◽  
K. W. Carey ◽  
G. A. Reid
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantitative Analysis ◽  
High Resolution ◽  
Electronic Properties ◽  
Lattice Structure ◽  
Dissimilar Materials ◽  
Interface Structure ◽  
Transmission Electron ◽  
Optical And Electronic Properties

ABSTRACTWe define the Interface between two dissimilar materials by two functions, g(z) and f(x,y), representing the diffuseness along the interface normal and the distribution of interface non-planarities respectively. We show how these functions may be measured for the case of epitaxial interfaces between dissimilar crystals by quantitative analysis of lattice structure images obtained by high resolution transmission electron microscopy. Experimental examples are drawn from the GeSi/Si, InGaAs/InAlAs and InGaAs/InP systems. Correlations between interface structure and optical and electronic properties of these systems are discussed.

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