A New Approach of Photonic Bandgap Formation -Wafer Bonding and Delamination Technique-

Author(s):  
K. Wada ◽  
H. Aga ◽  
K. Mitani ◽  
T. Abe ◽  
M. Suezawa ◽  
...  
1998 ◽  
Vol 535 ◽  
Author(s):  
Kazumi Wada ◽  
Thomas Chen ◽  
Jurgen Michel ◽  
Lionel C. Kimerling ◽  
Hiroshi Aga ◽  
...  

AbstractA new approach for one-dimensional photonic bandgap formation is introduced. The method consists of wafer bonding and delamination, which is capable of stacking single crystalline semiconductor layers on non-crystalline insulator layers. Si and SiO2 layers with sub-wavelength periodicity are successfully stacked to form photonic crystals consisting of 3 pairs without a defect layer and of 4.5 pairs with a defect layer. The transmittance spectra are well reproduced by transfer matrix calculations. This clearly verifies the potential of the wafer bonding and delamination method.


2014 ◽  
Vol 64 (5) ◽  
pp. 83-93
Author(s):  
R. He ◽  
M. Fujino ◽  
A. Yamauchi ◽  
T. Suga

1997 ◽  
Vol 64 (2) ◽  
pp. 211-212 ◽  
Author(s):  
P. Kopperschmidt ◽  
G. Kästner ◽  
D. Hesse ◽  
U.M. Gösele ◽  
M. Lorenz

Author(s):  
H. Wang ◽  
Y. F. Lu ◽  
Z. Y. Yang

Nanoscale structuring is a promising area in which the various processing methods are being developed. Based on the advantages of laser processing, associated with improved self-assembly technique, it is very effective to fabricate nanoscale structures, such as 3-D photonic bandgap structures, especially on the materials with high hardness and high melting point. This new approach to fabricating 3-D photonic bandgap structures on silicon will be presented. Self-assembly technique was used to deposit multi-layer of silica microparticles with a size of 0.81 μm. A pulsed KrF excimer laser (23 ns, 248 nm) was applied as the imprinting energy source.


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