Reduced Dark Current Characteristics of a Norman-Incident In0.2Ga0.8As/GaAs QWIP Employing a p-i-n-i-p Camel Diode Structure
2002 ◽
Vol 46
(5)
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pp. 651-654
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Keyword(s):
Keyword(s):
Keyword(s):
2007 ◽
Vol 36
(8)
◽
pp. 963-970
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2005 ◽
Vol 47
(1-2)
◽
pp. 22-28
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