Room Temperature Operation of an Exclusive-OR Circuit Using a Highly-Doped Si Single-Electron Transistor

Mapping Intimacies ◽

10.7567/ssdm.2004.g-8-3 ◽

2004 ◽

Author(s):

Tetsuya Kitade ◽

Kensaku Ohkura ◽

Anri Nakajima

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Exclusive Or ◽

Room Temperature Operation

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Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Applied Physics Letters ◽

10.1063/1.1894594 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123118 ◽

Author(s):

Tetsuya Kitade ◽

Kensaku Ohkura ◽

Anri Nakajima

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Exclusive Or ◽

Room Temperature Operation

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Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2010.2086475 ◽

2011 ◽

Vol 10 (1) ◽

pp. 96-98 ◽

Author(s):

Yongshun Sun ◽

Rusli ◽

Navab Singh

Keyword(s):

Room Temperature ◽

Optical Lithography ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.115202 ◽

2010 ◽

Vol 49 (11) ◽

pp. 115202 ◽

Author(s):

Joung-Eob Lee ◽

Garam Kim ◽

Kim Kyung Wan ◽

Won Bo Shim ◽

Jung-Han Lee ◽

...

Keyword(s):

Room Temperature ◽

Oxidation Process ◽

Channel Structure ◽

Single Electron ◽

Single Electron Transistor ◽

Recessed Channel ◽

Room Temperature Operation

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Island Engineering of Single-Electron Transistor for Room Temperature Operation

Lecture Notes in Electrical Engineering - Advances in VLSI and Embedded Systems ◽

10.1007/978-981-15-6229-7_23 ◽

2020 ◽

pp. 289-299

Author(s):

Raj Shah ◽

Rutu Parekh ◽

Rasika Dhavse

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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Programmable single-electron transistor logic for future low-power intelligent LSI: proposal and room-temperature operation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.813909 ◽

2003 ◽

Vol 50 (7) ◽

pp. 1623-1630 ◽

Author(s):

K. Uchida ◽

J. Koga ◽

R. Ohba ◽

A. Toriumi

Keyword(s):

Low Power ◽

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system

Applied Physics Letters ◽

10.1063/1.116747 ◽

1996 ◽

Vol 68 (1) ◽

pp. 34-36 ◽

Author(s):

K. Matsumoto ◽

M. Ishii ◽

K. Segawa ◽

Y. Oka ◽

B. J. Vartanian ◽

...

Keyword(s):

Scanning Tunneling Microscope ◽

Room Temperature ◽

Single Electron ◽

Scanning Tunneling ◽

Single Electron Transistor ◽

Tunneling Microscope ◽

Room Temperature Operation

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Room-temperature operation of highly functional single-electron transistor logic based on quantum mechanical effect in ultra-small silicon dot

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269390 ◽

2004 ◽

Author(s):

M. Saitoh ◽

T. Hiramoto

Keyword(s):

Room Temperature ◽

Mechanical Effect ◽

Single Electron ◽

Quantum Mechanical ◽

Single Electron Transistor ◽

Quantum Mechanical Effect ◽

Room Temperature Operation

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Room-temperature operation of multifunctional single-electron transistor logic

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904454 ◽

2002 ◽

Author(s):

K. Uchida ◽

J. Koga ◽

R. Ohba ◽

A. Toriumi

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process

10.7567/ssdm.1995.s-ii-5 ◽

1995 ◽

Author(s):

Kazuhiko MATSUMOTO ◽

Masami ISHII ◽

Kazuhito SEGAWA ◽

Yasushi OKA ◽

Bartev J. VARTANIAN ◽

...

Keyword(s):

Room Temperature ◽

Oxidation Process ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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Room temperature operation of single electron transistor made by STM nano-oxidation process

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496264 ◽

2002 ◽

Author(s):

K. Matsumoto ◽

M. Ishii ◽

K. Segawa ◽

Y. Oka ◽

B.J. Vartanian ◽

...

Keyword(s):

Room Temperature ◽

Oxidation Process ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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