Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure
2010 ◽
Vol 49
(11)
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pp. 115202
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2011 ◽
Vol 10
(1)
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pp. 96-98
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2003 ◽
Vol 50
(7)
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pp. 1623-1630
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1999 ◽
Vol 86
(5)
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pp. 641-662
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