Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO2 Passivation Layer
2010 ◽
Vol 645-648
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pp. 1223-1226
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2018 ◽
Vol 65
(9)
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pp. 3848-3854
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2017 ◽
Vol 16
(3)
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pp. 741-747
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2011 ◽
Vol 58
(2)
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pp. 460-465
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2021 ◽
Vol 68
(4)
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pp. 1550-1556
2015 ◽
Vol 46
(12)
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pp. 1387-1391
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