scholarly journals High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Chao Yang ◽  
Xiaorong Luo ◽  
Tao Sun ◽  
Anbang Zhang ◽  
Dongfa Ouyang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Passivation Layer ◽  
Gan Hemt ◽  
High Breakdown Voltage

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

High breakdown voltage AlGaN/GaN HEMT with high‐K/low‐K compound passivation

2015 ◽  
Vol 51 (1) ◽  
pp. 104-106 ◽  
Author(s):  
Jiangfeng Du ◽  
Nanting Chen ◽  
Peilin Pan ◽  
Zhiyuan Bai ◽  
Liang Li ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Gan Hemt ◽  
High Breakdown Voltage ◽  
High K ◽  
Low K

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

2014 ◽  
Vol 778-780 ◽  
pp. 791-794 ◽  
Author(s):  
Kohei Ebihara ◽  
Yasuki Yamamoto ◽  
Yoshiyuki Nakaki ◽  
Sunao Aya ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Parallel Plane ◽  
Power Devices ◽  
Edge Termination ◽  
Varying Thickness ◽  
High Breakdown Voltage ◽  
Tcad Simulation

Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mask having a varying thickness. The breakdown voltage is recorded to be over 96% of the parallel-plane breakdown voltage, and the reverse bias characteristics are well accorded with the result of TCAD simulation.

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT

2013 ◽  
Vol 740-742 ◽  
pp. 974-977 ◽  
Author(s):  
Arash Salemi ◽  
Hossein Elahipanah ◽  
Benedetto Buono ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Electric Field ◽  
Ion Implantation ◽  
Field Distribution ◽  
Breakdown Voltage ◽  
Contact Area ◽  
Electric Field Distribution ◽  
Current Gain ◽  
High Current ◽  
High Breakdown Voltage ◽  
Base Contact

Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage and high current gain have been achieved; meanwhile the device area with a constant emitter and base contact area has been reduced by about 30%.

Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO2 Passivation Layer

2007 ◽  
Author(s):  
Jiyong Lim ◽  
Young-Hwan Choi ◽  
In-Hwan Ji ◽  
Kyu-Heon Cho ◽  
Jihye Lee ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Passivation Layer ◽  
Gan Hemts
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