Low Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

2009 ◽  
Author(s):  
N. Yafune ◽  
M. Nagamori ◽  
F. Watanabe ◽  
K. Sakuno ◽  
M. Kuzuhara
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
Low Resistivity

Low-Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

2010 ◽  
Vol 49 (4) ◽  
pp. 04DF10 ◽  
Author(s):  
Norimasa Yafune ◽  
Motoi Nagamori ◽  
Hironari Chikaoka ◽  
Fuminao Watanabe ◽  
Keiichi Sakuno ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
Low Resistivity

VERY LOW RESISTIVITY AuMn GATE OHMIC CONTACTS FOR GaInAs DIFFUSED JFETs

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-453-C4-456 ◽  
Author(s):  
P. E. HALLALI ◽  
P. BLANCONNIER ◽  
L. BRICARD ◽  
J-C. RENAUD
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity

scholarly journals Characteristics of Al/Ge Schottky and ohmic contacts at low temperatures

2021 ◽  
Vol 130 ◽  
pp. 105820
Author(s):  
Shreyas Pitale ◽  
Manoranjan Ghosh ◽  
S.G. Singh ◽  
Husain Manasawala ◽  
G.D. Patra ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts

Low-Temperature Pecvd Si3N4 Films for GaAs Encapsulation and Passivation.

1989 ◽  
Vol 165 ◽  
Author(s):  
R. L. Pfeffer ◽  
G. J. Gerardi ◽  
R. A. Lux ◽  
K. A. Jones ◽  
E. H. Poindexter ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Low Temperatures ◽  
Ohmic Contacts ◽  
Ir Spectrometry ◽  
Ion Channeling ◽  
Interface Damage ◽  
Passivation Layers ◽  
Inert Carrier ◽  
Reactive Gases

AbstractWe have begun a detailed study of the physical properties of Si3 N4 films deposited at low temperatures using a PECVD process based on dilution of reactive gases with inert carrier gas [1] in order to investigate their feasibility for use as post-implant encapsulants and/or device passivation layers for GaAs. The films and substrates are analyzed by ion channeling, ellipsometry, IR spectrometry, ESR, RBS, and SEM to evaluate implantationinduced substrate and interface damage as well as the films’ optical properties, surface morphology, stoichiometry, uniformity, stress, and electrical trapping characteristics. Following furnace or RTA annealing they are recharacterized, adding SIMS to evaluate As diffusion into the films. Both Schottky and ohmic contacts are then formed and used to measure Hall mobility, trap density and 1/f noise. Preliminary results of these studies are presented and compared with those obtained using other techniques such as wafer-to-wafer As entrapment, arsine overpressure, or conventional CVD.

Ohmic contacts to low-resistivity ZnS: Preparation, noise properties and nature of contact resistance

1977 ◽  
Vol 20 (11) ◽  
pp. 879-882 ◽  
Author(s):  
N.B. Lukyanchikova ◽  
G.S. Pekar ◽  
N.N. Tkachenko ◽  
Hoang Mi Shin ◽  
M.K. Sheinkman
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Low Resistivity

scholarly journals Formation Mechanisms of Low-Resistivity Ni∕Pt Ohmic Contacts to Li-Doped p-Type ZnO

2009 ◽  
Vol 12 (3) ◽  
pp. H60 ◽  
Author(s):  
Y. F. Lu ◽  
Z. Z. Ye ◽  
Y. J. Zeng ◽  
L. P. Zhu ◽  
J. Y. Huang ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Formation Mechanisms ◽  
Low Resistivity ◽  
P Type

Low resistivity as-deposited ohmic contacts to 3C-SiC

1995 ◽  
Vol 24 (4) ◽  
pp. 315-318 ◽  
Author(s):  
A. Moki ◽  
P. Shenoy ◽  
D. Alok ◽  
B. J. Baliga ◽  
K. Wongchotigul ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity
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