VERY LOW RESISTIVITY AuMn GATE OHMIC CONTACTS FOR GaInAs DIFFUSED JFETs

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-453-C4-456 ◽  
Author(s):  
P. E. HALLALI ◽  
P. BLANCONNIER ◽  
L. BRICARD ◽  
J-C. RENAUD
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity

Low Resistivity V/Al/Mo/Au Ohmic Contacts on AlGaN/GaN Annealed at Low Temperatures

2009 ◽  
Author(s):  
N. Yafune ◽  
M. Nagamori ◽  
F. Watanabe ◽  
K. Sakuno ◽  
M. Kuzuhara
Keyword(s):  
Low Temperatures ◽  
Ohmic Contacts ◽  
Low Resistivity

Ohmic contacts to low-resistivity ZnS: Preparation, noise properties and nature of contact resistance

1977 ◽  
Vol 20 (11) ◽  
pp. 879-882 ◽  
Author(s):  
N.B. Lukyanchikova ◽  
G.S. Pekar ◽  
N.N. Tkachenko ◽  
Hoang Mi Shin ◽  
M.K. Sheinkman
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Low Resistivity

scholarly journals Formation Mechanisms of Low-Resistivity Ni∕Pt Ohmic Contacts to Li-Doped p-Type ZnO

2009 ◽  
Vol 12 (3) ◽  
pp. H60 ◽  
Author(s):  
Y. F. Lu ◽  
Z. Z. Ye ◽  
Y. J. Zeng ◽  
L. P. Zhu ◽  
J. Y. Huang ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Formation Mechanisms ◽  
Low Resistivity ◽  
P Type

Low resistivity as-deposited ohmic contacts to 3C-SiC

1995 ◽  
Vol 24 (4) ◽  
pp. 315-318 ◽  
Author(s):  
A. Moki ◽  
P. Shenoy ◽  
D. Alok ◽  
B. J. Baliga ◽  
K. Wongchotigul ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity

Formation of low resistivity ohmic contacts to n-type 3C-SiC

2002 ◽  
Vol 46 (8) ◽  
pp. 1227-1230 ◽  
Author(s):  
Jianwei Wan ◽  
Michael A Capano ◽  
Michael R Melloch
Keyword(s):  
Ohmic Contacts ◽  
Low Resistivity

Low-Resistivity Non-Alloyed Ohmic Contacts to p- and n-Gaas Using In-Situ Integrated Process

1994 ◽  
Vol 337 ◽  
Author(s):  
M. Hong ◽  
D. Vakhshoori ◽  
J. P. Mannaerts ◽  
J. Kwo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Integrated System ◽  
Integrated Process ◽  
Low Resistivity ◽  
Uniform Doping

ABSTRACTVery low-resistivity non-alloyed ohmic contacts (Rc) to both p- and n-GaAs were realized using molecular beam epitaxy (MBE) in a vacuum integrated system. Three different metals of Au, Ag, and Nb were in-situ deposited on (1) p+-GaAs which was heavily Be-doped either in a uniform doping or with a 5-doping scheme; and (2) n+-GaAs which was doped in a 5-pair Si δ-doping with a spacer GaAs-Si 2.5 nm thick. In both cases, low Rc values of ≤ (1-5) x 10-7 Ω-cm2 were achieved.

Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping

2011 ◽  
Vol 1305 ◽  
Author(s):  
K. Sawano ◽  
Y. Hoshi ◽  
K. Kasahara ◽  
K. Yamane ◽  
K. Hamaya ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contacts ◽  
Doping Profile ◽  
Nanometer Scale ◽  
Shallow Junction ◽  
Low Resistivity ◽  
Current Voltage ◽  
Delta Doping ◽  
Current Voltage Characteristics

ABSTRACTWe demonstrate low-resistivity Ohmic contacts for n-Ge with ultra-shallow junction. Using the impurity δ-doping techniques with Ge homoepitaxy on Ge(111) below 400 ºC, we can achieve a very abrupt doping profile within a nanometer-scale width. By introducing the δ-doping to atomically controlled metal/Ge contacts, the current-voltage characteristics clearly show Ohmic conductions owing to the effective tunneling through the Schottky barrier. This approach is promising for a formation technology of ultra-shallow source/drain contacts for scaled Ge devices.

scholarly journals Low resistivity ohmic contacts to moderately doped n‐GaAs with low‐temperature processing

1995 ◽  
Vol 13 (3) ◽  
pp. 758-762 ◽  
Author(s):  
Michael L. Lovejoy ◽  
Arnold J. Howard ◽  
Kevin R. Zavadil ◽  
Dennis J. Rieger ◽  
Randy J. Shul ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contacts ◽  
Low Resistivity ◽  
Low Temperature Processing
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