Room Temperature Electroluminescence from InAs/GaAs Quantum Dots Grown on Ge/Si Substrate by Metal Organic Chemical Vapor Deposition

2013 ◽  
Author(s):  
R. Mohan ◽  
K. Tanabe ◽  
S. Kako ◽  
K. Kawaguchi ◽  
M. Nishioka ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Non-polar InGaN quantum dots grown on the m-plane of n-GaN nanowires by a self-catalyst method using metal organic chemical vapor deposition

CrystEngComm ◽  
2014 ◽  
Vol 16 (32) ◽  
pp. 7580 ◽  
Author(s):  
Hee-Il Yoo ◽  
Yong-Ho Ra ◽  
R. Navamathavan ◽  
Yong-Hyun Choi ◽  
Ji-Hyeon Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Gan Nanowires ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Dislocation analysis of InGaN/GaN quantum dots grown by metal organic chemical vapor deposition

2016 ◽  
Vol 99 ◽  
pp. 221-225 ◽  
Author(s):  
Di Yang ◽  
Lai Wang ◽  
Zhi-Biao Hao ◽  
Yi Luo ◽  
Changzheng Sun ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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