Electrical Property of Single-phase HMS Grown by Temperature Gradient Solution Growth Method using Ga and Sn Solvent

2015 ◽  
Author(s):  
S. Hori ◽  
M. Iioka ◽  
S. Jimba ◽  
Y. Hara ◽  
H. Udono
Crystals ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 82 ◽  
Author(s):  
Liying Yin ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Boru Zhou ◽  
Fan Yang ◽  
...  

2015 ◽  
Vol 30 (4) ◽  
pp. 401 ◽  
Author(s):  
YANG Rui ◽  
JIE Wan-Qi ◽  
SUN Xiao-Yan ◽  
YANG Min ◽  
HU Huan ◽  
...  

2013 ◽  
Vol 634-638 ◽  
pp. 2470-2474 ◽  
Author(s):  
Xiao Xiang Sun ◽  
Jia Hua Min ◽  
Xiao Yan Liang ◽  
Tao Zhang ◽  
Jia Qi Teng ◽  
...  

CdZnTe bulk crystals were grown by temperature gradient solution growth (TGSG) method with the lower starting growth temperature of 1223K, temperature gradient of 20-30 K/cm and a crucible dropping rate varied from 1 to 0.6 mm/h. Optical microscope, IR microscope, I-V characteristics and FTIR transmission spectroscopy were employed to analyze the growth interfaces, Te inclusions, resistivity and IR transmittance respectively. The results indicate that a smooth and uniform growth interface has been achieved. The density of Te inclusions is about 7.9-9.5×103cm-2, while the resistivity is higher than 6.87×109Ωcm and the IR transmittance is about 55-60%.


2011 ◽  
Vol 11 ◽  
pp. 177-180 ◽  
Author(s):  
Y. Ujiie ◽  
K. Nakamori ◽  
S. Mashiko ◽  
H. Udono ◽  
T. Nagata

Author(s):  
Klaus Gillessen ◽  
Albert J. Marshall ◽  
Joachim Hesse

2003 ◽  
Vol 78 (2) ◽  
pp. 529-533 ◽  
Author(s):  
P.Y. Tseng ◽  
C.B. Fu ◽  
M.C. Kuo ◽  
C.S. Yang ◽  
C.C. Huang ◽  
...  

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