Effect of Cr/In-doping on the crystalline quality of bulk ZnTe crystals grown from Te solution by temperature gradient solution growth (TGSG) method

2015 ◽  
Vol 36 (9) ◽  
pp. 093006 ◽  
Author(s):  
Rui Yang ◽  
Wanqi Jie ◽  
Xiaoyan Sun ◽  
Min Yang
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Crystalline Quality ◽  
In Doping ◽  
Gradient Solution

scholarly journals The Effects of ACRT on the Growth of ZnTe Crystal by the Temperature Gradient Solution Growth Technique

Crystals ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 82 ◽  
Author(s):  
Liying Yin ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Boru Zhou ◽  
Fan Yang ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Growth Technique ◽  
Znte Crystal ◽  
Gradient Solution ◽  
Solution Growth Technique

Characterization of Cr-doped ZnTe Crystals Grown by Temperature Gradient Solution Growth (TGSG)

2015 ◽  
Vol 30 (4) ◽  
pp. 401 ◽  
Author(s):  
YANG Rui ◽  
JIE Wan-Qi ◽  
SUN Xiao-Yan ◽  
YANG Min ◽  
HU Huan ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Gradient Solution

Effect of doping on crystalline quality of rubidium titanyl phosphate (RTP) crystals grown by the TSSG method

2014 ◽  
Vol 1698 ◽  
Author(s):  
Jianqiu Guo ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Joan J. Carvajal ◽  
Ali Butt ◽  
...  
Keyword(s):  
Growth Process ◽  
Solution Growth ◽  
Crystalline Quality ◽  
Defect Structures ◽  
Growth Sector ◽  
High Quality ◽  
X Ray ◽  
Linear Defects ◽  
Top Seeded Solution Growth

ABSTRACTDefect structures in Rubidium Titanyl Phosphate (RTP) crystals (non-doped and doped) grown by the Top Seeded Solution Growth (TSSG) method were characterized using Synchrotron White Beam X-ray Topography. Main defects observed in non-doped crystals are growth sector boundaries while both growth sector boundaries and growth striations are observed in the Nb single doped and (Nb,Yb)-codoped crystals with relatively few linear defects such as dislocations. Results show that the overall crystalline quality is lowered as more doping elements are incorporated. Details of defect distributions are correlated with the growth process to facilitate high quality growth of doped RTP.

Growth and Characterization of CdZnTe Bulk Crystals Grown by Temperature Gradient Solution Growth

2013 ◽  
Vol 634-638 ◽  
pp. 2470-2474 ◽  
Author(s):  
Xiao Xiang Sun ◽  
Jia Hua Min ◽  
Xiao Yan Liang ◽  
Tao Zhang ◽  
Jia Qi Teng ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Growth Temperature ◽  
Optical Microscope ◽  
Solution Growth ◽  
Bulk Crystals ◽  
Growth Interface ◽  
Transmission Spectroscopy ◽  
Gradient Solution ◽  
Te Inclusions

CdZnTe bulk crystals were grown by temperature gradient solution growth (TGSG) method with the lower starting growth temperature of 1223K, temperature gradient of 20-30 K/cm and a crucible dropping rate varied from 1 to 0.6 mm/h. Optical microscope, IR microscope, I-V characteristics and FTIR transmission spectroscopy were employed to analyze the growth interfaces, Te inclusions, resistivity and IR transmittance respectively. The results indicate that a smooth and uniform growth interface has been achieved. The density of Te inclusions is about 7.9-9.5×103cm-2, while the resistivity is higher than 6.87×109Ωcm and the IR transmittance is about 55-60%.

scholarly journals Effect of temperature modulation during temperature gradient solution growth of β- FeSi2

2011 ◽  
Vol 11 ◽  
pp. 177-180 ◽  
Author(s):  
Y. Ujiie ◽  
K. Nakamori ◽  
S. Mashiko ◽  
H. Udono ◽  
T. Nagata
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Effect Of Temperature ◽  
Temperature Modulation ◽  
Gradient Solution
Sign in / Sign up

Export Citation Format

Share Document