Crystal growth of β-FeSi2 by temperature gradient solution growth method using Zn solvent

2002 ◽  
Vol 237-239 ◽  
pp. 1971-1975 ◽  
Author(s):  
Haruhiko Udono ◽  
Shinobu Takaku ◽  
Isao Kikuma
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Solution Growth ◽  
Gradient Solution ◽  
Growth Method

scholarly journals The Effects of ACRT on the Growth of ZnTe Crystal by the Temperature Gradient Solution Growth Technique

Crystals ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 82 ◽  
Author(s):  
Liying Yin ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Boru Zhou ◽  
Fan Yang ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Growth Technique ◽  
Znte Crystal ◽  
Gradient Solution ◽  
Solution Growth Technique

Crystal growth, structure and optical properties of a new acentric crystal La2Al4.68B8O22 with a short UV absorption edge

2016 ◽  
Vol 40 (6) ◽  
pp. 4870-4873 ◽  
Author(s):  
Shu Guo ◽  
Lijuan Liu ◽  
Mingjun Xia ◽  
Xiaoyang Wang ◽  
Lei Bai ◽  
...  
Keyword(s):  
Optical Properties ◽  
Crystal Growth ◽  
Absorption Edge ◽  
Uv Absorption ◽  
Solution Growth ◽  
Growth Structure ◽  
Growth Method ◽  
193 Nm ◽  
Top Seeded Solution Growth

A new acentric borate La2Al4.68B8O22 crystal, grown using the top seeded solution growth method, shows a short absorption edge at 193 nm.

Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent

2019 ◽  
Vol 963 ◽  
pp. 85-88 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Yutaka Kishida ◽  
Kazuaki Seki
Keyword(s):  
Heat Transfer ◽  
Crystal Growth ◽  
Single Crystal ◽  
Large Diameter ◽  
Growth Conditions ◽  
Bulk Crystal ◽  
Solution Growth ◽  
Heat Transfer Analysis ◽  
Growth Method ◽  
The Magnetic Field

We grew large diameter and long size 4H-SiC crystals by the solution growth method using Si-Cr based solvent. To optimize the crystal growth conditions, we applied two-dimensional axisymmetric steady-state analysis to conduct a comprehensive heat transfer analysis that calculates the magnetic field, heat transfer, and liquid flow. In particular, by optimizing the solution surface temperature environment and the seed shaft structure, we suppressed parasitic undesirable crystal formations and promoted single crystal growth at the same time. Consequently, we obtained a 2-inch bulk crystal with a thickness of 20 mm and a 4-inch bulk crystal with a thickness of 15 mm.

Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

2013 ◽  
Vol 740-742 ◽  
pp. 311-314 ◽  
Author(s):  
Kazuaki Seki ◽  
S. Harada ◽  
Toru Ujihara
Keyword(s):  
Crystal Growth ◽  
Growth Rates ◽  
Solution Growth ◽  
High Quality ◽  
Preferential Growth ◽  
Bulk Crystal Growth ◽  
Seed Crystals ◽  
Growth Method ◽  
The Difference ◽  
Top Seeded Solution Growth

In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-SiC, double positioning boundaries (DPBs) are often formed by the existence of twinned domain. The elimination of DPBs can be achieved utilizing the anisotropy of the step advance velocity.

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