Growth and Characterization of CdZnTe Bulk Crystals Grown by Temperature Gradient Solution Growth

2013 ◽  
Vol 634-638 ◽  
pp. 2470-2474 ◽  
Author(s):  
Xiao Xiang Sun ◽  
Jia Hua Min ◽  
Xiao Yan Liang ◽  
Tao Zhang ◽  
Jia Qi Teng ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Growth Temperature ◽  
Optical Microscope ◽  
Solution Growth ◽  
Bulk Crystals ◽  
Growth Interface ◽  
Transmission Spectroscopy ◽  
Gradient Solution ◽  
Te Inclusions

CdZnTe bulk crystals were grown by temperature gradient solution growth (TGSG) method with the lower starting growth temperature of 1223K, temperature gradient of 20-30 K/cm and a crucible dropping rate varied from 1 to 0.6 mm/h. Optical microscope, IR microscope, I-V characteristics and FTIR transmission spectroscopy were employed to analyze the growth interfaces, Te inclusions, resistivity and IR transmittance respectively. The results indicate that a smooth and uniform growth interface has been achieved. The density of Te inclusions is about 7.9-9.5×103cm-2, while the resistivity is higher than 6.87×109Ωcm and the IR transmittance is about 55-60%.

Characterization of Cr-doped ZnTe Crystals Grown by Temperature Gradient Solution Growth (TGSG)

2015 ◽  
Vol 30 (4) ◽  
pp. 401 ◽  
Author(s):  
YANG Rui ◽  
JIE Wan-Qi ◽  
SUN Xiao-Yan ◽  
YANG Min ◽  
HU Huan ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Gradient Solution

Improvement of the THz response of Zn1−xMnxTe bulk crystals grown by a temperature gradient solution method

CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 3051-3057
Author(s):  
Yadong Xu ◽  
Jiangpeng Dong ◽  
Hongjian Zheng ◽  
Bao Xiao ◽  
Leilei Ji ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Solution Method ◽  
Bulk Crystals ◽  
Gradient Solution

scholarly journals The Effects of ACRT on the Growth of ZnTe Crystal by the Temperature Gradient Solution Growth Technique

Crystals ◽  
2017 ◽  
Vol 7 (3) ◽  
pp. 82 ◽  
Author(s):  
Liying Yin ◽  
Wanqi Jie ◽  
Tao Wang ◽  
Boru Zhou ◽  
Fan Yang ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Solution Growth ◽  
Growth Technique ◽  
Znte Crystal ◽  
Gradient Solution ◽  
Solution Growth Technique

Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N2-He Atmosphere

2008 ◽  
Vol 600-603 ◽  
pp. 187-190 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Nobuyoshi Yashiro ◽  
Takashi Tanaka ◽  
Akihiro Yauchi
Keyword(s):  
Growth Temperature ◽  
The Other ◽  
Solution Growth ◽  
Epitaxial Layers ◽  
Other Hand ◽  
Homoepitaxial Layers ◽  
Top Seeded Solution Growth ◽  
Koh Etching

Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1645-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The growth under He atmosphere produced 6H-SiC homoepitaxial layers. On the other hand, the growth under N2-He atmosphere led to 3C-SiC epitaxial layers. It was obvious that the nitrogen dissolved in solvent strongly favoured the 3C-SiC polytype formation on 6H-SiC. We also conducted characterization of 3C-SiC layers grown on 6H-SiC (0001)Si by TEM, molten KOH etching and precise XRD measurement.

Solution Growth and Optical Characterization of β-FeSi2 Bulk Crystals

2002 ◽  
Vol 41 (Part 2, No. 5B) ◽  
pp. L583-L585 ◽  
Author(s):  
Haruhiko Udono ◽  
Isao Kikuma
Keyword(s):  
Optical Characterization ◽  
Solution Growth ◽  
Bulk Crystals
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