scholarly journals Nanocomposite C-Pd thin films – a new material with specific spectral properties

2013 ◽  
Vol 2 (1) ◽  
pp. 65
Author(s):  
M. Suchańska ◽  
H. Baghdasaryan ◽  
J. Kęczkowska
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Spectral Properties ◽  
New Material

In this paper, the results of optical investigations for thin films of carbon-palladium (C-Pd) nanocomposites are presented. This films were prepared using two steps method (PVD/ CVD). The optical and Raman spectroscopy has been used to characterize the material. The multinanolayer model was used to explain the specific spectral properties.

Polycrystalline GeC Thin Films Deposited Using a Unique Hollow Cathode Sputtering Technique

2005 ◽  
Vol 862 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
J. S. Schrader ◽  
V. L. Dalal
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Hollow Cathode ◽  
Growth Conditions ◽  
Group Iv ◽  
Native Oxide ◽  
Cathode Sputtering ◽  
Si Substrates ◽  
New Material ◽  
Equilibrium Growth

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The mostimportant contribution of this work is that it shows that by using non-equilibrium growth conditions resulting from the hollow cathode technique, one can grow Group IV materials which cannot otherwise be grown using normal CVD or MBE processes. The sputtering is accomplished by igniting a dc plasma in the Ar and H2 gases which are fed through Ge and C nozzles.The GeC films are grown on etched Si (100), on Si with the native oxide and on glass. The films grown on glass were quite disordered, but the films grown on both types of Si substrates were very ordered in nature. This order has been characterized using Xray diffraction (XRD) and Raman spectroscopy.Films with as much as 8% C have been deposited. In order to produce useful GexC1-x films, the C must bond to the Ge at lattice sites. Evidence of this desired GeC bond has been seen using Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and XRD.

scholarly journals Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Behaviour ◽  
Electrical Measurements ◽  
Threshold Switching ◽  
Switching Behaviour

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.

Enhanced waveguide Raman spectroscopy with thin films. Plenary lecture

The Analyst ◽  
1994 ◽  
Vol 119 (4) ◽  
pp. 491 ◽  
Author(s):  
S. Ellahi ◽  
R. E. Hester
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Plenary Lecture

scholarly journals Structural Changes in Doped Ge2Sb2Te5 Thin Films Studied by Raman Spectroscopy

2013 ◽  
Vol 44 ◽  
pp. 82-90 ◽  
Author(s):  
S. Kozyukhin ◽  
M. Veres ◽  
H.P. Nguyen ◽  
A. Ingram ◽  
V. Kudoyarova
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structural Changes

Broadband Coherent Anti-Stokes Raman Spectroscopy Characterization of Polymer Thin Films

2006 ◽  
Vol 60 (10) ◽  
pp. 1097-1102 ◽  
Author(s):  
Zachary D. Schultz ◽  
Marc C. Gurau ◽  
Lee J. Richter
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Polymer Thin Films ◽  
Anti Stokes

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

2013 ◽  
Vol 114 (18) ◽  
pp. 183504 ◽  
Author(s):  
Quan Wang ◽  
Yanmin Zhang ◽  
Ran Hu ◽  
Daohan Ge ◽  
Naifei Ren
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structure Disorder ◽  
Disorder Degree

Laser Induced Oxidation Effects in Bismuth Thin Films

2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Laser Irradiation ◽  
Raman Spectra ◽  
Exposure Time ◽  
Oxidation Process ◽  
Energy Dispersion Spectroscopy ◽  
Irradiation Power ◽  
Pure Bismuth ◽  
532 Nm

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

Raman spectroscopy of CuInSe2 thin films prepared by selenization

2003 ◽  
Vol 64 (9-10) ◽  
pp. 1989-1993 ◽  
Author(s):  
E.P. Zaretskaya ◽  
V.F. Gremenok ◽  
V. Riede ◽  
W. Schmitz ◽  
K. Bente ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy

Combination of IBA techniques and Raman spectroscopy to study defects in 18O labelled YBaCuO thin films

1994 ◽  
Vol 85 (1-4) ◽  
pp. 462-467 ◽  
Author(s):  
J.García López ◽  
J.C.Cheang Wong ◽  
C. Ortega ◽  
J. Siejka ◽  
I. Trimaille ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy
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