Polycrystalline GeC Thin Films Deposited Using a Unique Hollow Cathode Sputtering Technique

2005 ◽  
Vol 862 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
J. S. Schrader ◽  
V. L. Dalal
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Hollow Cathode ◽  
Growth Conditions ◽  
Group Iv ◽  
Native Oxide ◽  
Cathode Sputtering ◽  
Si Substrates ◽  
New Material ◽  
Equilibrium Growth

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The mostimportant contribution of this work is that it shows that by using non-equilibrium growth conditions resulting from the hollow cathode technique, one can grow Group IV materials which cannot otherwise be grown using normal CVD or MBE processes. The sputtering is accomplished by igniting a dc plasma in the Ar and H2 gases which are fed through Ge and C nozzles.The GeC films are grown on etched Si (100), on Si with the native oxide and on glass. The films grown on glass were quite disordered, but the films grown on both types of Si substrates were very ordered in nature. This order has been characterized using Xray diffraction (XRD) and Raman spectroscopy.Films with as much as 8% C have been deposited. In order to produce useful GexC1-x films, the C must bond to the Ge at lattice sites. Evidence of this desired GeC bond has been seen using Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and XRD.

Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique

2006 ◽  
Vol 910 ◽  
Author(s):  
James L. Huguenin-Love ◽  
Rodney J. Soukup ◽  
Natale J. Ianno ◽  
Jason S. Schrader ◽  
Vikram L. Dalal
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Basic Material ◽  
X Ray Diffraction ◽  
Film Properties ◽  
Cathode Sputtering ◽  
Lattice Match ◽  
Cylindrical Tubes ◽  
New Material ◽  
Initial Results

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented here. The (Ge, C) system is extremely promising since the addition of C to Ge has reduced the lattice dimensions enough to allow a lattice match to silicon, while increasing the bandgap close to that of c-Si. The sputtering is accomplished by igniting a dc plasma of the Ar and H2 gases which are fed through Ge and C nozzles, cylindrical tubes 30 mm in length with an 8 mm O.D. and a 3 mm I.D.The basic material, optical, and structural properties were analyzed. Film characterization was performed using Fourier transform infra-red spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Auger electron spectroscopy. Additional measurements such as Tauc bandgap, conductivity as a function of temperature and light intensity, and film uniformity have been made. The film properties from a variety of deposition conditions are discussed. The measurements made indicate that the films can be grown so that the C enters the material at lattice sites. In addition, the GexC1-x films absorb photons much more efficiently than either c-Si or c-Ge.Initial results on Al doped films are presented.

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode

2010 ◽  
Vol 645-648 ◽  
pp. 131-134 ◽  
Author(s):  
James Huguenin-Love ◽  
Noel T. Lauer ◽  
Rodney J. Soukup ◽  
Ned J. Ianno ◽  
Štepan Kment ◽  
...  
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Cathode Sputtering

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

scholarly journals Nanocomposite C-Pd thin films – a new material with specific spectral properties

2013 ◽  
Vol 2 (1) ◽  
pp. 65
Author(s):  
M. Suchańska ◽  
H. Baghdasaryan ◽  
J. Kęczkowska
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Spectral Properties ◽  
New Material

In this paper, the results of optical investigations for thin films of carbon-palladium (C-Pd) nanocomposites are presented. This films were prepared using two steps method (PVD/ CVD). The optical and Raman spectroscopy has been used to characterize the material. The multinanolayer model was used to explain the specific spectral properties.

Processing Of PbTi03 And Pb(ZrxTi1−x)03 Thin Films By Novel Single-Solid-Source Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 474 ◽  
Author(s):  
Ping Lu ◽  
Hang Li ◽  
Shan Sun ◽  
Brace Tuttle
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Si Substrates ◽  
Process Reliability ◽  
Precursor Powders ◽  
Metalorganic Chemical

ABSTRACTFerroelectric PbTiO3(FT) and Pb(ZrxTi1−x)03 (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO2/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems associated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited FT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have been carried out. Effects of substrate, substrate temperature, system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.

Large area deposition of YBaCuO thin films by means of hollow cathode sputtering

1993 ◽  
Vol 195 ◽  
pp. 267-269 ◽  
Author(s):  
H.-U. Müller ◽  
J.-P. Müller ◽  
F. Ludwig ◽  
G. Ehlers
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Large Area ◽  
Cathode Sputtering ◽  
Area Deposition

Raman spectroscopy and X-ray diffraction study of sol–gel derived (Pb1−xLax)Ti1−x/4O3 thin films on Si substrates

1998 ◽  
Vol 322 (1-2) ◽  
pp. 323-328 ◽  
Author(s):  
Di Wu ◽  
Ai-dong Li ◽  
Chuan-Zhen Ge ◽  
Peng Lü ◽  
Chun-Yi Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Diffraction Study ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

Growth and Characterization of Ba0.5Sr0.5TiO3 Thin Films on Si (100) By 90° Off-Axis Sputtering

1994 ◽  
Vol 343 ◽  
Author(s):  
S. Y. Hou ◽  
J. Kwo ◽  
R. K. Watts ◽  
D. J. Werder ◽  
J. Shmulovich ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Rf Sputtering ◽  
Growth Conditions ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
Parasitic Effect ◽  
Bst Films

ABSTRACTWe have studied BaxSr1-xTiO3 (BST) thin films (x=0.5) grown on Si (100) with and without a Pt/Ta barrier layer using 90° off-axis RF sputtering. The growth conditions were optimized according to film crystallinity, stoichiometry, and dielectric properties. Polycrystalline BST films with strong (100) texture were obtained via growth on Si (100). The measured dielectric constant from these films was low, presumably because of the parasitic effect of native oxide at BST/Si interface as revealed by TEM. On the other hand, BST films grown on Si with Pt/Ta barrier layers have crystallinity inferior to that on bare Si as determined by X-ray diffraction. Nevertheless, the best BST films on Pt/Ta layers still have good dielectric properties with dielectric constant exceeding 330, leakage current density < 1×10−6 A/cm2 (±1 V), and loss tangent 0.05 at 1 MHz.

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