scholarly journals Induced Charge Distribution Using Accelerated Uzawa Method

2021 ◽  
Vol 34 (4) ◽  
pp. 191-197
Author(s):  
Jae-Hyun Kim ◽  
Gwanghyun Jo ◽  
Youn Doh Ha
Keyword(s):  
Charge Distribution ◽  
Uzawa Method ◽  
Induced Charge

Significantly improved Li-ion diffusion kinetics and reversibility of Li2O in a MoO2 anode: the effects of oxygen vacancy-induced local charge distribution and metal catalysis on lithium storage

2019 ◽  
Vol 7 (29) ◽  
pp. 17570-17580 ◽  
Author(s):  
Tao Meng ◽  
Jinwen Qin ◽  
Zhen Yang ◽  
Lirong Zheng ◽  
Minhua Cao
Keyword(s):  
Oxygen Vacancy ◽  
Charge Distribution ◽  
Diffusion Kinetics ◽  
Ion Diffusion ◽  
Lithium Storage ◽  
Metal Catalysis ◽  
Local Charge ◽  
Li Ion ◽  
Induced Charge

The effects of oxygen vacancy-induced charge distribution and metal catalysis improve the Li-ion diffusion and reversibility of Li2O in MoO2.

Study of position resolution for cathode readout MWPC with measurement of induced charge distribution

1983 ◽  
Vol 206 (3) ◽  
pp. 451-463 ◽  
Author(s):  
J. Chiba ◽  
H. Iwasaki ◽  
T. Kageyama ◽  
S. Kuribayashi ◽  
K. Nakamura ◽  
...  
Keyword(s):  
Charge Distribution ◽  
Position Resolution ◽  
Induced Charge

Induced-charge distribution in vertical quantum dots

2001 ◽  
Author(s):  
S. Bednarek ◽  
B. Szafran ◽  
J. Adamowski
Keyword(s):  
Quantum Dots ◽  
Charge Distribution ◽  
Induced Charge

The charge distribution on interstellar grains?The effect of induced charge

1978 ◽  
Vol 59 (2) ◽  
pp. 389-411 ◽  
Author(s):  
I. C. Simpson ◽  
S. Simons ◽  
I. P. Williams
Keyword(s):  
Charge Distribution ◽  
Interstellar Grains ◽  
Induced Charge

Polarization-Induced Charge Distribution at Homogeneous Zincblende/Wurtzite Heterostructural Junctions in ZnSe Nanobelts

2012 ◽  
Vol 24 (10) ◽  
pp. 1328-1332 ◽  
Author(s):  
Luying Li ◽  
Lei Jin ◽  
Jianbo Wang ◽  
David J. Smith ◽  
Wan-Jian Yin ◽  
...  
Keyword(s):  
Charge Distribution ◽  
Induced Charge

Pressure-induced charge distribution effect on superconducting critical temperature of HgBa2Ca2Cu3O8+δ

2000 ◽  
Vol 341-348 ◽  
pp. 275-276 ◽  
Author(s):  
H.M. Shao ◽  
S.A. Aruna ◽  
C.J. Wang ◽  
M.S. Zhuo ◽  
X.L. Sun ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Charge Distribution ◽  
Distribution Effect ◽  
Induced Charge

scholarly journals A stochastic model of gamma-ray induced oxide charge distribution and threshold voltage shift of MOS transistors

2012 ◽  
Vol 27 (1) ◽  
pp. 33-39 ◽  
Author(s):  
Tijana Kevkic ◽  
Mihajlo Odalovic ◽  
Dragan Petkovic
Keyword(s):  
Stochastic Model ◽  
Silicon Dioxide ◽  
Charge Distribution ◽  
Threshold Voltage ◽  
Gamma Ray ◽  
Mos Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Silicon Dioxide Films ◽  
Induced Charge

A stochastic model of gamma-ray radiation effects on the density of the induced charge in silicon dioxide films of MOS transistors is presented in this paper. It is assumed that both radiation induced charge generation and trapped charge recombination are stochastic processes. For estimating gamma-ray induced charges spatially distributed in silicon dioxide films, a procedure similar to the Monte Carlo method was used. The proposed model implemented in the programming language MATHEMATICA enables us, for the first time, to show the gamma-ray induced charge distribution as a function of gamma-ray doses. Using the developed model, we have also calculated the corresponding threshold voltage shifts of MOS transistors. These results were compared with the experimentally determined threshold voltage shift of MOS transistors with different voltages applied during irradiation vs. gamma radiation doses. Satisfactory agreements were obtained.

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