ABSTRACTp- and n-type weakly absorbing highly conductive (σ>0.1(Ωcm)-1) SiC thin films with similar structural and optoelectronic properties have been prepared in a TCDDC reactor. These films contain Si microcrystals embedded in an amorphous Si:O:C:H matrix. C is preferentially incorporated as stoichiometric SiC, whereas O is present mainly as suboxide. Absorption coefficients smaller than cr-Si are observed for films containing about 20at% C and 25at% O. From diffraction studies there is no evidence for the presence of SiC crystallites. Photoluminescence studies show a peak at about 1.68eV, similar to gd a-SiC:H of comparable optical properties.
Effect of annealing and substrate temperature on structural and optoelectronic properties of a-SiGe:H thin films