Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

In this work, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers used for the fabrication of double-channel metal–oxide–semiconductor high-electron mobility transistors (MOSHEMTs) were grown on silicon substrates using a metalorganic chemical vapor deposition system (MOCVD). A sheet electron density of 1.11 × 1013 cm−2 and an electron mobility of 1770 cm2/V-s were obtained. Using a vapor cooling condensation system to deposit high insulating 30-nm-thick Ga2O3 film as a gate oxide layer, double-hump transconductance behaviors with associated double-hump maximum extrinsic transconductances (gmmax) of 89.8 and 100.1 mS/mm were obtained in the double-channel planar MOSHEMTs. However, the double-channel devices with multiple-mesa-fin-channel array with a gmmax of 148.9 mS/mm exhibited single-hump transconductance behaviors owing to the better gate control capability. Moreover, the extrinsic unit gain cutoff frequency and maximum oscillation frequency of the devices with planar channel and multiple-mesa-fin-channel array were 5.7 GHz and 10.5 GHz, and 6.5 GHz and 12.6 GHz, respectively. Hooge’s coefficients of 7.50 × 10−5 and 6.25 × 10−6 were obtained for the devices with planar channel and multiple-mesa-fin-channel array operating at a frequency of 10 Hz, drain–source voltage of 1 V, and gate–source voltage of 5 V, respectively.

Slip And Hall Effects On The Flow Of A Hyperbolic Tangent Fluid Through Porous Medium In A Planar Channel With Peristalsis

In this paper, the effect of Slip and Hall effects on the flow of Hyperbolic tangent fluid through a porous medium in a planar channel with peristalsis under the assumption of long wavelength is investigated. A Closed form solutions are obtained for axial velocity and pressure gradient by employing perturbation technique. The effects of various emerging parameters on the pressure gradient, time averaged volume flow rate and frictional force are discussed with the aid of graphs.

Analysis of Transition for a Flow in a Channel via Reduced Basis Methods

The study of the flow mechanisms leading to transition in a planar channel flow is investigated by means of a reduced basis method known as Dynamic Mode Decomposition (DMD). The problem of identification of the most relevant DMD modes is addressed in terms of the ability to (i) provide a fairly accurate reconstruction of the flow field, and (ii) match the most relevant flow structures at the beginning of the transition region. A comparative study between a natural method of selection based on the energetic content of the modes and a new one based on the temporal dynamics of the modes is here presented.