Degradation of Cu nanowires in a low-reactive plasma environment

The quest for miniaturisation of electronic devices is one of the backbones of industry 4.0 and nanomaterials are an envisaged solution capable of addressing these complex technological challenges. When subjected to synthesis and processing, nanomaterials must be able to hold pristine its initial designed properties, but occasionally, this may trigger degradation mechanisms that can impair their application by either destroying their initial morphology or deteriorating of mechanical and electrical properties. Degradation of nanomaterials under processing conditions using plasmas, ion implantation and high temperatures is up to date largely sub-notified in the literature. The degradation of single-crystal Cu nanowires when exposed to a plasma environment with residual active O is herein investigated and reported. It is shown that single-crystal Cu nanowires may degrade even in low-reactive plasma conditions by means of a vapour–solid–solid nucleation and growth mechanism.

From nanoparticles to bulk crystalline solid: nucleation, growth kinetics and crystallisation of mixed oxide ZrxTi1−xO2 nanoparticles

We describe the preparation of mixed metal oxide nanoparticles of a desirable composition and their transformation to the crystalline solids ZrxTi1−xO2 (0.0 ≤ x ≤ 1.0) after heat treatment.

Studies of the self-assembled growth mechanism on nanocrystalline silicon nanodots

Nanocrystalline silicon (nc-Si) nanodots have been grown on corning glass (7059) substrate using a self-assembly VHF-PECVD method under the following experimental conditions: Fixed deposition temperatures of 300/400 °C, deposition times 30/60 s, plasma power of 10 W, silane gas flow rate of 10 sccm, as well as deposition pressure of 10-2 torr. It is predicted that the onset of nucleation began immediately after the deposition and start to appear clearly after 20-60 s during which growth mechanisms occur. Essentially, the nanodots were formed onto the substrate in dome-like shapes by virtue of equilibrium surface energies, γLS, γLN andγNS. The associated liquid/solid nucleation mechanism was then simulated and related parameters were obtained: Free energy change per unit volume ΔGv ∼-104 Jmol-1; Surface energies per unit area, γLN = 1.44 Jm-2, γNS = 19 - 60 Jm-2 and γLS = 0.74 Jm-2; Critical energies ΔG* ∼10-15 J; Critical radii r* = 16 - 48 nm. These results were experimentally verified, in particular for selected critical radius r* less than 50 nm.Other measurements were also carried out: PL analysis gave bandgap energies ∼ 1.8-2.4 eV, whilst Raman spectra revealed the coexistence of nc-Si and amorphous Si. It is strongly suggested that, the nc-Si nanodot grown on glass substrate fulfills the Volmer-Weber growth mode with a minor modification.