Degradation of Cu nanowires in a low-reactive plasma environment

Abstract The quest for miniaturisation of electronic devices is one of the backbones of industry 4.0 and nanomaterials are an envisaged solution capable of addressing these complex technological challenges. When subjected to synthesis and processing, nanomaterials must be able to hold pristine its initial designed properties, but occasionally, this may trigger degradation mechanisms that can impair their application by either destroying their initial morphology or deteriorating of mechanical and electrical properties. Degradation of nanomaterials under processing conditions using plasmas, ion implantation and high temperatures is up to date largely sub-notified in the literature. The degradation of single-crystal Cu nanowires when exposed to a plasma environment with residual active O is herein investigated and reported. It is shown that single-crystal Cu nanowires may degrade even in low-reactive plasma conditions by means of a vapour–solid–solid nucleation and growth mechanism.

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Single crystal diamond boron 'delta doped' nanometric layers for 2D electronic devices (Conference Presentation)

Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX ◽

10.1117/12.2239939 ◽

2016 ◽

Author(s):

James Butler

Keyword(s):

Single Crystal ◽

Electronic Devices ◽

Single Crystal Diamond

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Influence of Processing Conditions on Formation of Stray Grains in DD5 Single-Crystal Superalloys by Laser Melting Multi-Traced Deposition

Chinese Journal of Lasers ◽

10.3788/cjl201744.0602009 ◽

2017 ◽

Vol 44 (6) ◽

pp. 0602009

Author(s):

刘小欣 Liu Xiaoxin ◽

程序 Cheng Xu ◽

王华明 Wang Huaming ◽

李佳 Li Jia

Keyword(s):

Single Crystal ◽

Processing Conditions ◽

Laser Melting ◽

Stray Grains

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Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism

International Journal of Electrochemistry ◽

10.1155/2016/3212703 ◽

2016 ◽

Vol 2016 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Fei Peng ◽

Shuang-Jiao Qin ◽

Yu Zhao ◽

Ge-Bo Pan

Keyword(s):

Single Crystal ◽

Electrochemical Techniques ◽

Deposition Process ◽

Nucleation And Growth ◽

X Ray Diffraction ◽

X Ray ◽

Surface Nucleation ◽

Instantaneous Nucleation ◽

Nucleation And Growth Mechanism ◽

Transient Measurements

The electrochemical deposition of zinc on single-crystaln-type GaN(0001) from a sulphate solution has been investigated on the basis of electrochemical techniques including cyclic voltammetry, chronoamperometry, and Tafel plot. The morphology and crystal structure of zinc deposits have been characterized by means of scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray analysis. The result has revealed that the deposition of Zn on GaN electrode commenced at a potential of −1.12 V versus Ag/AgCl. According to the Tafel plot, an exchange current density of ~0.132 mA cm−2was calculated. In addition, the current transient measurements have shown that Zn deposition process followed the instantaneous nucleation in 10 mM ZnSO4+ 0.5 M Na2SO4+ 0.5 M H3BO3(pH = 4).

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Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure

MRS Proceedings ◽

10.1557/opl.2014.601 ◽

2014 ◽

Vol 1693 ◽

Cited By ~ 2

Author(s):

Feng Zhao ◽

Allen Lim ◽

Zhibang Chen ◽

Chih-Fang Huang

Keyword(s):

Single Crystal ◽

Electronic Devices ◽

Device Fabrication ◽

Flat Band ◽

Harsh Environment ◽

Mems Devices ◽

Etching Technique ◽

Epitaxial Structure ◽

Single Crystal Sic ◽

P Type

ABSTRACTIn this paper, single crystal 4H-SiC MEMS devices with n-p-n epitaxial structure was fabricated. A dopant-selective photoelectrochemical etching technique was applied to etch the sacrificial p-type SiC layer to release n-type SiC suspended structures on n-type SiC substrate. The selective etching was achieved by applying a bias which employs the different flat-band potentials of n-SiC and p-SiC in KOH solution. Such MEMS devices have the potential to fully exploit the superior properties of single crystal SiC for harsh environment operation, as well as mature epitaxial growth and device fabrication of 4H-SiC. The n-p-n structure, together with the previously reported p-n structure, extends the capability of monolithic integration between MEMS with electronic devices and circuits on SiC platform.

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Electrochemical Growth of Single-Crystal Metal Nanowires via a Two-Dimensional Nucleation and Growth Mechanism

Nano Letters ◽

10.1021/nl034217d ◽

2003 ◽

Vol 3 (7) ◽

pp. 919-923 ◽

Cited By ~ 275

Author(s):

Mingliang Tian ◽

Jinguo Wang ◽

James Kurtz ◽

Thomas E. Mallouk ◽

M. H. W. Chan

Keyword(s):

Single Crystal ◽

Growth Mechanism ◽

Nucleation And Growth ◽

Metal Nanowires ◽

Two Dimensional ◽

Electrochemical Growth ◽

Nucleation And Growth Mechanism

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OS1909 Tensile Testing on (110) Thin Film Single Crystal Silicon with Different Processing Conditions

The Proceedings of the Materials and Mechanics Conference ◽

10.1299/jsmemm.2012._os1909-1_ ◽

2012 ◽

Vol 2012 (0) ◽

pp. _OS1909-1_-_OS1909-2_

Author(s):

Akio UESUGI ◽

Yoshikazu HIRAI ◽

Koji SUGANO ◽

Toshiyuki TSUCHIYA ◽

Osamu TABATA

Keyword(s):

Thin Film ◽

Single Crystal ◽

Tensile Testing ◽

Single Crystal Silicon ◽

Processing Conditions ◽

Crystal Silicon

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Characteristics of Recrystallised Polysilicon on SiO2 Produced by Dual Electron Beam Processing

MRS Proceedings ◽

10.1557/proc-13-563 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 4

Author(s):

J.R. Davis ◽

R.A. Mcmahon ◽

H. Ahmed

Keyword(s):

Electron Beam ◽

Single Crystal ◽

Single Crystal Silicon ◽

Processing Conditions ◽

Crystal Silicon ◽

Electron Beam Processing ◽

Free Region ◽

Beam Heating ◽

Lateral Epitaxy ◽

Electron Beam Heating

ABSTRACTThis paper describes the production of large areas of precisely oriented, defect-free, single crystal silicon films on SiO2 by dual electron beam heating of deposited polysilicon using lateral epitaxy. Defects which occur in the film far from the seeding window are characterised, and the dependence of the area of the defect-free region on the processing conditions is discussed.

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Intrinsically Elastic Organic Semiconductors (IEOSs)

Molecules ◽

10.3390/molecules26206130 ◽

2021 ◽

Vol 26 (20) ◽

pp. 6130

Author(s):

Fei Liu ◽

Xueling Hou ◽

Ben-Lin Hu ◽

Run-Wei Li

Keyword(s):

Organic Synthesis ◽

Organic Semiconductors ◽

Structural Engineering ◽

Electronic Devices ◽

Synthetic Methods ◽

Chemical Structures ◽

Mechanical And Electrical Properties ◽

Wearable Electronic ◽

Synthetic Routes ◽

Wearable Electronic Devices

Elastic semiconductors are becoming more and more important to the development of flexible wearable electronic devices, which can be prepared by structural engineering design, blending, and the intrinsic elastification of organic semiconductors (intrinsically elastic organic semiconductor, IEOS). Compared with the elastic semiconductors prepared by structural engineering and blending, the IEOS prepared by organic synthesis has attracted numerous attentions for its solution processability and highly tunable chemical structures. For IEOSs, reasonable designs of synthetic routes and methods are the basis for realizing good mechanical and electrical properties. This brief review begins with a concise introduction of elastic semiconductors, then follows with several synthetic methods of IEOSs, and concludes the characteristics of each method, which provides guidance for the synthesis of IEOSs in the future. Furthermore, the properties of IEOSs are involved from the aspects of electrical, mechanical properties, and the applications of the IEOSs in elastic electronic devices. Finally, the challenge and an outlook which IEOSs are facing are presented in conclusion.

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On Crystal Mosaicity in Single Crystal Ni-Based Superalloys

Crystals ◽

10.3390/cryst9030149 ◽

2019 ◽

Vol 9 (3) ◽

pp. 149 ◽

Cited By ~ 11

Author(s):

Philipp Hallensleben ◽

Felicitas Scholz ◽

Pascal Thome ◽

Helge Schaar ◽

Ingo Steinbach ◽

...

Keyword(s):

Image Analysis ◽

Single Crystal ◽

Optical Microscopy ◽

Growth Process ◽

Direct Evidence ◽

Processing Conditions ◽

Dendritic Solidification ◽

Inherent Feature ◽

Quantitative Image ◽

Two Factors

In the present work, we investigate the evolution of mosaicity during seeded Bridgman processing of technical Ni-based single crystal superalloys (SXs). For this purpose, we combine solidification experiments performed at different withdrawal rates between 45 and 720 mm/h with advanced optical microscopy and quantitative image analysis. The results obtained in the present work suggest that crystal mosaicity represents an inherent feature of SXs, which is related to elementary stochastic processes which govern dendritic solidification. In SXs, mosaicity is related to two factors: inherited mosaicity of the seed crystal and dendrite deformation. Individual SXs have unique mosaicity fingerprints. Most crystals differ in this respect, even when they were produced using identical processing conditions. Small differences in the orientation spread of the seed crystals and small stochastic orientation deviations continuously accumulate during dendritic solidification. Direct evidence for dendrite bending in a seeded Bridgman growth process is provided. It was observed that continuous or sudden bending affects the growth directions of dendrites. We provide evidence which shows that some dendrites continuously bend by 1.7° over a solidification distance of 25 mm.

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