Ag-Yb Alloy-Novel Tunable Plasmonic Material

Metals are commonly used in plasmonic devices because of their strong plasmonic property. However, such properties are not easily tuned. For applications such as spatial light modulators and beam steering, tunable plasmonic properties are essential, and neither metals nor other plasmonic materials possess truly tunable plasmonic properties. In this work, we show that the silver alloy silver–ytterbium (Ag-Yb) possesses tunable plasmonic properties; its plasmonic response strength can be adjusted as a function of Yb concentration. Such tunability can be explained in terms of the influence of Yb on bound charge and interaction of its dielectric with the dielectric of Ag. The change in transition characteristics progressively weakens Ag’s plasmonic properties. With a spectral ellipsometric measurement, it was shown that the Ag-Yb alloy thin film retains the properties of Ag with high transmission efficiency. The weakened surface plasmon coupling strength without dramatic change in the coupling wavelengths implies that the tunability of the Ag-Yb alloy is related to its volume ratio. The principle mechanism of the plasmonic change is theoretically explained using a model. This work points to a potential new type of tunable plasmonic material.

A Rational Fabrication Method for Low Switching-Temperature VO2

Due to its remarkable switching effect in electrical and optical properties, VO2 is a promising material for several applications. However, the stoichiometry control of multivalent vanadium oxides, especially with a rational deposition technique, is still challenging. Here, we propose and optimize a simple fabrication method for VO2 rich layers by the oxidation of metallic vanadium in atmospheric air. It was shown that a sufficiently broad annealing time window of 3.0–3.5 h can be obtained at an optimal oxidation temperature of 400 °C. The presence of VO2 was detected by selected area diffraction in a transmission electron microscope. According to the temperature dependent electrical measurements, the resistance contrast (R30 °C/R100 °C) varied between 44 and 68, whereas the optical switching was confirmed using in situ spectroscopic ellipsometric measurement by monitoring the complex refractive indices. The obtained phase transition temperature, both for the electrical resistance and for the ellipsometric angles, was found to be 49 ± 7 °C, i.e., significantly lower than that of the bulk VO2 of 68 ± 6 °C.