transient radiation
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Author(s):  
Hua Fan ◽  
Lang Feng ◽  
Kelin Zhang ◽  
Zheng Fang ◽  
Yuanjun Cen ◽  
...  

2019 ◽  
Vol 30 ◽  
pp. 10004
Author(s):  
Aleksander Kuznetsov ◽  
Vadim Elesin ◽  
Nikolay Usachev ◽  
George Chukov

The transient radiation effects in 0.1 μm E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver’s functional upset.


2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Mengxuan Xu ◽  
Liang Chen ◽  
Zhiming Yao ◽  
Shuqing Ren ◽  
Yuying Zhang ◽  
...  

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