Enhanced thermoelectric performance in Sb–Br codoped Bi2Se3 with complex electronic structure and chemical bond softening

A detailed description of the charge density difference of BiSb(Se0.92Br0.08)3.

Structural Analysis of Sputtered Sc(x)Al(1-x)N Layers for Sensor Applications

Scandium aluminum nitride (ScxAl1-xN) is a promising material for sensor applications as it exhibits enhanced piezoelectric properties compared to pristine AlN while maintaining other advantageous properties like high thermal stability. Magnetoelectric sensors in particular are used to detect magnetic fields which leads to special requirements regarding the investigated ScAlN in order to achieve high sensor sensitivities. Co-sputtered ScAlN layers are investigated in this work using XRD, XPS, FTIR and Raman spectroscopy for scandium concentrations from 0 to 34 %. The impact of Sc incorporation regarding residual biaxial strain and bond softening is discussed on basis of the experimental results. The activity of the B1 and E2 modes found in the FTIR measurements is of special interest as the presumably oxygen related excitation is expected to influence the piezoelectric properties.

Thermoelectric enhancement in sliver tantalate via strain-induced band modification and chemical bond softening

Herein, we report the strain-induced enhancement of the Seebeck coefficient, caused by valence band modification and thermal conductivity reduction due to bond softening.

Enhancement of the thermoelectric performance of bulk SnTe alloys via the synergistic effect of band structure modification and chemical bond softening

Seebeck coefficient of SnTe is largely enhanced by large band effective mass or decrease of energy separation through synergistic effect including resonance level and band convergence.

High thermoelectric performance in Te-free (Bi,Sb)2Se3via structural transition induced band convergence and chemical bond softening

In Te-free (Bi,Sb)2Se3, structural transition induced electronic band convergence and intensified phonon scattering triple the thermoelectric ZT to 1.0.