UV light driven photoelectric properties of ZnO film to humidity were researched. ZnO film was prepared through the method of screen printing sustained on Al2O3 substrate. ZnO was characterized by XRD, FE-SEM and EDX. The time-dependent UV light driven photoelectric
properties of ZnO were investigated by exposing it to different bias voltages and different relative humidity (20% RH, 40% RH, 60% RH and 80% RH). On one hand, the photoelectric properties of ZnO increased with the augmenting of bias voltage, which shows that a higher bias causes more separation
of carriers. On the other hand, the photocurrent decreased with the increase in relative humidity, which shows that bigger humidity results in smaller photoelectric property. To discuss these results, corresponding possible illustrations for the photoelectric properties under different conditions
were proposed.
