Experimental Investigation to Study the Feasibility of Fabricating Ultra-Conductive Copper Using a Hybrid Method

Ultra-conductive copper (UCC) has an enormous potential to disrupt the existing electrical and electronic systems. Recent studies on carbon nanotubes (CNTs), a new class of materials, showed the ballistic conductance of electricity. Researchers around the world are able to demonstrate ultra-conductivity in micro- and millimeter-length sections using various processing techniques by embedding CNTs in the copper matrix. Although multiple methods promise the possibility of producing copper-based nanocomposites with gains in electrical conductivity, thus far, scaling up these results has been quite a challenge. We investigated a hybrid method of both hot-pressing followed by rolling in order to produce UCC wire. Cu/CNT billets of 1/10%, 1/15%, and 1/20% were hot-pressed and the conductivity results were compared to a hot-pressed pure copper billet. Our results indicated that this method is not a viable approach, as the gains in electrical conductivity are neutralized, followed by attenuation of the wire cross-section.

Magnetic Moments and Electron Transport through Chromium-Based Antiferromagnetic Nanojunctions

We report the electronic, magnetic and transport properties of a prototypical antiferromagnetic (AFM) spintronic device. We chose Cr as the active layer because it is the only room-temperature AFM elemental metal. We sandwiched Cr between two non-magnetic metals (Pt or Au) with large spin-orbit coupling. We also inserted a buffer layer of insulating MgO to mimic the structure and finite resistivity of a real device. We found that, while spin-orbit has a negligible effect on the current flowing through the device, the MgO layer plays a crucial role. Its effect is to decouple the Cr magnetic moment from Pt (or Au) and to develop an overall spin magnetization. We have also calculated the spin-polarized ballistic conductance of the device within the Büttiker–Landauer framework, and we have found that for small applied bias our Pt/Cr/MgO/Pt device presents a spin polarization of the current amounting to ≃25%.

Magnetic Moments and Electron Transport through Chromium-based Antiferromagnetic Nanojunctions

We report the electronic, magnetic and transport properties of a prototypical antiferromagnetic (AFM) spintronic device. We chose Cr as the active layer because it is the only room-temperature AFM elemental metal. We sandwiched Cr between two non-magnetic metals (Pt or Au) with large spin-orbit coupling. We also inserted a buffer layer of insulating MgO to mimic the structure and finite resistivity of a real device. We found that, while spin-orbit has a negligible effect on the current flowing through the device, the MgO layer plays a crucial role. Its effect is to decouple the Cr magnetic moment from Pt (or Au) and to develop an overall spin magnetization. We have also calculated the spin-polarized ballistic conductance of the device within the Büttiker-Landauer framework, and we have found that for small applied bias our Pt/Cr/MgO/Pt device presents a spin polarization of the current amounting to ~25%.