Extended Hückel Semi-Empirical Approach as an Efficient Method for Structural Defects Analysis in 4H-SiC

This paper presents an efficient method to calculate the influence of structural defects on the energy levels and energy band-gap for the 4H-SiC semiconductor. The semi-empirical extended Hückel method was applied to both ideal 4H-SiC crystal and different structures with defects like vacancies, stacking faults, and threading edge dislocations. The Synopsys QuatumATK package was used to perform the simulations. The results are in good agreement with standard density functional theory (DFT) methods and the computing time is much lower. This means that a structure with ca. 1000 atoms could be easily modeled on typical computing servers within a few hours of computing time, enabling fast and accurate simulation of non-ideal atomic structures.

Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs

Silicene is one of the most interesting nanomaterials. In this chapter, computational studies have been done on Silicene nanotube and nanoribbon-based FETs to analyze their transport properties. The FET is designed from armchair nanoribbon and single wall nanotube. The scattering region is capped by a dielectric and a metallic layer to form a gate. The conductance versus gate bias voltage, conductance versus temperature up to 2000K, and electrode temperature versus current characteristics are calculated and plotted along with the design of the equivalent model of the structure. Extended Huckel-based calculations were used, and the analysis shows the transport properties of both structures.

Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs

Silicene is one of the most interesting nanomaterials. In this chapter, computational studies have been done on Silicene nanotube and nanoribbon-based FETs to analyze their transport properties. The FET is designed from armchair nanoribbon and single wall nanotube. The scattering region is capped by a dielectric and a metallic layer to form a gate. The conductance versus gate bias voltage, conductance versus temperature up to 2000K, and electrode temperature versus current characteristics are calculated and plotted along with the design of the equivalent model of the structure. Extended Huckel-based calculations were used, and the analysis shows the transport properties of both structures.

Karakteristik dan Struktur Elektronik Bahan Semikoduktor ZnO-Quantum Dot (ZnO-QD)

Zinc Oxide (ZnO) merupakan bahan semikonduktor yang berupa senyawa inorganik. ZnO memiliki potensi aplikasi sebagai sensor cahaya, laser dioda, transistor film tipis transparan, dan LED (Light Emitting Diode). Celah energi pada ZnO dapat ditingkatkan dengan memperkecil ukuran partikel dan dikenal sebagai ZnO Quantum-Dot(ZnO-QD). Perhitungan celah energi ZnO-QD dengan variasi ukuran klaster ZnO dilakukan dengan menggunakan metode extended Hückel. Hasilnya menunjukkan bahwa semakin kecil ukuran klaster ZnO maka celah energi yang dihasilkan semakin besar.

Karakteristik dan Struktur Elektronik Bahan Semikoduktor ZnO-Quantum Dot (ZnO-QD)

Zinc Oxide (ZnO) merupakan bahan semikonduktor yang berupa senyawa inorganik. ZnO memiliki potensi aplikasi sebagai sensor cahaya, laser dioda, transistor film tipis transparan, dan LED (Light Emitting Diode). Celah energi pada ZnO dapat ditingkatkan dengan memperkecil ukuran partikel dan dikenal sebagai ZnO Quantum-Dot(ZnO-QD). Perhitungan celah energi ZnO-QD dengan variasi ukuran klaster ZnO dilakukan dengan menggunakan metode extended Hückel. Hasilnya menunjukkan bahwa semakin kecil ukuran klaster ZnO maka celah energi yang dihasilkan semakin besar.