Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs

2021 ◽  
pp. 305-316
Author(s):  
Deep Kamal Kaur Randhawa ◽  
Paramjot Singh ◽  
Tarun
Keyword(s):  
Transport Properties ◽  
Bias Voltage ◽  
Metallic Layer ◽  
Equivalent Model ◽  
Computational Studies ◽  
Gate Bias ◽  
Electrode Temperature ◽  
Extended Hückel ◽  
Current Characteristics

Silicene is one of the most interesting nanomaterials. In this chapter, computational studies have been done on Silicene nanotube and nanoribbon-based FETs to analyze their transport properties. The FET is designed from armchair nanoribbon and single wall nanotube. The scattering region is capped by a dielectric and a metallic layer to form a gate. The conductance versus gate bias voltage, conductance versus temperature up to 2000K, and electrode temperature versus current characteristics are calculated and plotted along with the design of the equivalent model of the structure. Extended Huckel-based calculations were used, and the analysis shows the transport properties of both structures.

Transport Properties of Silicene Nanotube- and Silicene Nanoribbon-Based FETs

2020 ◽  
pp. 213-227
Author(s):  
Deep Kamal Kaur Randhawa ◽  
Paramjot Singh ◽  
Tarun
Keyword(s):  
Transport Properties ◽  
Bias Voltage ◽  
Metallic Layer ◽  
Equivalent Model ◽  
Computational Studies ◽  
Gate Bias ◽  
Electrode Temperature ◽  
Extended Hückel ◽  
Current Characteristics

Silicene is one of the most interesting nanomaterials. In this chapter, computational studies have been done on Silicene nanotube and nanoribbon-based FETs to analyze their transport properties. The FET is designed from armchair nanoribbon and single wall nanotube. The scattering region is capped by a dielectric and a metallic layer to form a gate. The conductance versus gate bias voltage, conductance versus temperature up to 2000K, and electrode temperature versus current characteristics are calculated and plotted along with the design of the equivalent model of the structure. Extended Huckel-based calculations were used, and the analysis shows the transport properties of both structures.

scholarly journals Length-Dependent Electronic Transport Properties of the ZnO Nanorod

Micromachines ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 26
Author(s):  
Baorui Huang ◽  
Fuchun Zhang ◽  
Yanning Yang ◽  
Zhiyong Zhang
Keyword(s):  
Transport Properties ◽  
Bias Voltage ◽  
Electronic Transport ◽  
Density Functional ◽  
Interface State ◽  
Zno Nanorod ◽  
Functional Theory ◽  
Electronic Transport Properties ◽  
Integrated Devices ◽  
Potential Applications

The two-probe device of nanorod-coupled gold electrodes is constructed based on the triangular zinc oxide (ZnO) nanorod. The length-dependent electronic transport properties of the ZnO nanorod was studied by density functional theory (DFT) with the non-equilibrium Green’s function (NEGF). Our results show that the current of devices decreases with increasing length of the ZnO nanorod at the same bias voltage. Metal-like behavior for the short nanorod was observed under small bias voltage due to the interface state between gold and the ZnO nanorod. However, the influence of the interface on the device was negligible under the condition that the length of the ZnO nanorod increases. Moreover, the rectification behavior was observed for the longer ZnO nanorod, which was analyzed from the transmission spectra and molecular-projected self-consistent Hamiltonian (MPSH) states. Our results indicate that the ZnO nanorod would have potential applications in electronic-integrated devices.

The Spin Transport of the Coblt Dimers with Different Directions

2014 ◽  
Vol 543-547 ◽  
pp. 3947-3950
Author(s):  
Shi Wei Ren
Keyword(s):  
Transport Properties ◽  
Spin Polarization ◽  
Density Of States ◽  
Bias Voltage ◽  
Spin Transport ◽  
First Principle ◽  
Transport Direction ◽  
Spin Polarized ◽  
Analysis Calculation

In this paper, the spin transport properties of the coblt dimers parrallel to the transport direction and perpendicular to ransprot direction are investigated by using the first principle analysis. Calculation shows that both the coblt dimers parrallel to the transport direction and perpendicular to ransprot direction give obvious spin polarized density of states and current. It is found that the dimer parrallel to the transport direction have larger spin polarization current.The spin polarized efficiency for the parrallel dimer increase steadily with the increase of the bias voltage. But the the spin polarization for the transverse dimer changes greatly.

First-principles Study of Bias Effect on Magnetoresistance of Fe/MgO/Fe Tunnel Junctions

2013 ◽  
Vol 1577 ◽  
Author(s):  
Ning Deng ◽  
Hongguang Cheng
Keyword(s):  
Energy Level ◽  
Transport Properties ◽  
Bias Voltage ◽  
First Principles ◽  
Tunnel Junctions ◽  
First Principles Calculations ◽  
Bias Effect ◽  
High Bias Voltage ◽  
Interfacial States ◽  
High Bias

ABSTRACTWe studied the transport properties of the Fe/MgO/Fe and Fe/Ag/MgO/Ag/Fe magnetic tunnel junctions (MTJs) with 13-layer MgO barrier under bias voltage based on first-principles calculations. Our results showed that two features determine the TMR value decreases with bias of Fe/MgO/Fe MTJ: (1) interfacial states lying at 1.06 eV in spin down channel (2) the energy level of the spin down Δ1 band of the Fe electrode. Our results showed that an inserted Ag mono-layer at Fe/MgO interface can remarkably improve the TMR effect at a high bias voltage.

Bias voltage-dependent low field spin transport properties of Fe3O4–PEG with different particle sizes

2016 ◽  
Vol 30 (23) ◽  
pp. 1650301
Author(s):  
Chunlong Xu ◽  
Zhen Wang ◽  
Lei Wang ◽  
Gang Shi ◽  
Zhaoyang Hou ◽  
...  
Keyword(s):  
Transport Properties ◽  
Bias Voltage ◽  
Room Temperature ◽  
Spin Transport ◽  
Tunneling Effect ◽  
Particle Sizes ◽  
Low Field ◽  
Spin Dependent Transport ◽  
Voltage Dependent ◽  
Dependent Transport

Spin-dependent transport properties of Fe3O4 spheres with diameters from 200 nm to 900 nm have been investigated and polyethylene glycol (PEG) exists on the surface of Fe3O4 particles. The nonlinear I–V curve became obvious with the increase of Fe3O4 diameter, which indicated the tunneling barrier height decreases with the increasing diameter. The magnetoresistance (MR) can reach −13% with an applied low field of 0.2 T at room temperature. With the diameter increase, the MR decreases and the required applied field increases. Moreover, the decrease of MR with the bias voltage increase can be attributed to the spin-dependent tunneling effect through the insulating surface layer of Fe3O4 and PEG.

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