Study of Mos Structures Using Nuclear Analytical Methods

The atomic concentrations and depth distribution of elements in MOS (metal oxide semiconductor) structures have been investigated using two nuclear analytical methods: Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection (ERD). The elements with atomic masses in range from hydrogen up to copper were identified. Their depth profiles show that a MOS structure consists from metal (Al) layer, silicon oxide layer and a silicon substrate. The heavy elements Cu, Ti were found at near-surface area of one sample with low concentrations. The transitional area between the silicon substrate and the oxide layer as well as between the metal and oxide layers was noticed. The obtained results provide valuable information about MOS structures and concurrently demonstrate possibilities of both RBS and ERD methods in material analysis.

Key Problem in Support Vector Machine Model

This study found the development direction of SVM, the research content is the most crucial and fundamental nature in SVM, if achieve this paper targets, it will promote the further application of SVM, and have important theoretical value; In addition, this study are The basic work of nuclear analytical methods, the results can be directly applied to the field of recognition pattern based on nuclear analytical methods (such as Kernel Principal Component Analysis and Kernel Fisher method), so the research results of this paper has good generalized values.