DC and AC Conductivity, Biosolubility and Thermal Properties of Mg-Doped Na2O–CaO–P2O5 Glasses

Bioactive glasses have recently been extensively used to replace, regenerate, and repair hard tissues in the human body because of their ability to bond with living tissue. In this work, the effects of replacing Na2O with MgO on the electrical, biosolubility, and thermal properties of the target glass 10Na2O–60P2O5–30CaO (in mol%) were investigated. The electrical properties of the glasses were studied with the impedance spectroscopy technique. At 473 K, DC conductivity values decreased from 4.21 × 10−11 to 4.21 × 10−12 S cm−1 after complete substitution of MgO for Na2O. All samples had a similar activation energy of the DC conduction process ~1.27 eV. Conduction mechanisms were found to be due to hop of ions: Na+, Mg2+, and probable H+. FTIR analysis showed that, as the Mg content increased, the Q2 unit (PO2−) shifted towards higher wavenumbers. The proportion of Q3 unit (P2O5) decreased in the glass structure. This confirmed that the replacement of Na+ by Mg2+ was accompanied by concurrent polymerization of the calcium–phosphate glass network. The biosolubility test in the phosphate-buffered saline solution showed that the magnesium addition enhanced the biosolubility properties of Na2O–CaO–P2O5 glasses by increasing their dissolution rate and supporting forming CaP-rich layers on the surface. The glass transition temperature increased, and thermal stability decreased substantially upon substitution of Na2O by MgO.

Исследование диэлектрического отклика, проводимости и тока термостимулированной деполяризации в релаксорном сегнетоэлектрике PbNi-=SUB=-1/3-=/SUB=-Nb-=SUB=-2/3-=/SUB=-O-=SUB=-3-=/SUB=-

This paper presents results of a study of temperature dependences of dielectric response and DC and AC - conductivity in single crystals of the relaxor ferroelectric PbNi1/3Nb2/3O3 (PNN) in a wide range of frequencies (10 Hz - 100 kHz) and temperatures (80 - 750 K). Anomalies in the dielectric response in the form of broad frequency-dependent maxima in the vicinity of 153 and 730 K are observed. The thermal activation character of DC conductivity has been obtained, and activation energies determined as Ea = 770 meV (T > 310 K) and Ea = 23 meV (T <310 K). The analysis of conductivity gives reason to assume the existence of local conductivity in the low-temperature region. It is shown that the conductivity character changes above 350 K from the local to the bulk one. Measurement by thermally stimulated depolarization has shown the presence of a residual polarization below 130 K.

Dielectric and frequency-dependent transport properties of lanthanum-doped bismuth ferrite

Polycrystalline samples of Bi[Formula: see text]LaxFeO3 [[Formula: see text], 0.6, 0.7 and 0.8] were synthesized through high temperature solid state reaction method. The structural studies of the compounds were done using X-ray diffraction technique. Dielectric constant and dielectric loss were studied for various frequencies (100[Formula: see text]Hz–104[Formula: see text]Hz) at different temperatures. The temperature-dependent non-Debye type relaxation process was suggested in the materials from the analysis of frequency-dependent electrical data at different temperatures. Temperature dependence of dc and ac conductivity at various frequencies showed negative temperature coefficient of resistance (NTCR) behavior. The frequency dependence of ac conductivity at different temperatures obeyed Jonscher’s universal power law. The temperature dependence of dc and ac conductivity was fitted to Arrhenius equation. The activation energies at different temperature ranges were calculated to know the charge species involved in the conduction process.

Physical Insights on Charge Transport Mechanism and the LF Noise Behavior in Oxidized Si Structures with Ge Nanoclusters

To ascertain physical mechanism of charge transport in Si/SiOx structures with Ge nanoclusters the measurements of their DC and AC conductivity, and also the low-frequency measurements were performed. It was revealed that in the temperatures range 110 – 250 K the characteristics measured are governed by the hopping mechanism of charge transport. The model proposed suggests that the charge hopping becomes possible due to the band of localized states inducing in the bandgap of silicon substrate when Ge nanoclusters are introduced. The model was used to estimate some parameters of hopping transport. Also, the analysis of the low-frequency noise measured for Si/SiOx structures with Ge nanoclusters allowed to ascertain the mechanism of charge hopping resulting in strong temperature dependence of the 1/f noise measured.