The Effects of Optical Power of Semiconductor Laser on the Characteristics of Si-diode in an Exposed Device

In this paper, we experimentally studied the effects of optical power of semiconductor laser on the electrical properties of silicon diode of an exposed device. The experimental results showed that the laser diode light of different optical powers (2, 3, and 4 mW) had effects on the silicon diode that are somewhat similar to those of thermal treatment. A shift in the current-voltage curve to the left side was also noticed, which led to a non-linear decrease of the barrier voltage of the diode by the effect of laser light. We also reveal a decrease by 344.8 nA/mW in the reverse saturation current of the silicon diode as a result of exposure to laser light. The forward resistance of the silicon diode decreased with increased incident optical power. The value of the maximum current of diode increased by 0.5 A/W with increasing the optical power incident on the diode.

Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions

Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states. Article Highlights We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction. The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K. We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization. Graphic abstract

Estimasi Parameter Modul Surya 190 Wp Menggunakan Metode Newton Raphson

Tulisan ini menyajikan hasil penelitian tentang estimasi parameter modul surya tipe BLD180-72M dengan daya puncak 190 Wp menggunakan metode Newton Raphson. Dalam penelitian ini digunakan model rangkaian ekuivalen sel surya model satu diode. Parameter yang diestimasi adalah arus foton (photocurrent), resistansi seri dan resistansi paralel dari modul. Dua parameter lainnya, yaitu arus balik saturasi diode (diode reverse saturation current) dan faktor keidealan diode (diode ideality factor) tidak diestimasi tetapi diasumsikan memiliki nilai tertentu. Dalam penelitian ini, estimasi parameter , da berhasil dilakukan dan hasilnya konvergen, yaitu arus foton 6.7211A, resistansi seri 0.2135 Ω dan resistansi paralel sebesar 26.438 Ω. Pada penelitian ini, diberikan juga nilai ketiga parameter yang disebutkan untuk temperatur kerja modul 48 0C untuk bebagai tingkat penyinaran matahari. Berdasarkan kurva daya keluaran versus tegangan dari modul surya yang diteliti, diperoleh hasil bahwa untuk iradiasi matahari sebesar 600 W/m2, daya yang dihasilkan modul maksimum sekitar 70 W, dan untuk iradiasi matahari sebesar 700 W/m2 daya keluaran maksimumnya sekitar 102 W, dan untuk iradiasi matahari 1000 W/m2,, modul surya tipe BLD180-72M menghasilkan daya keluaran puncak sekitar 198 W

PV cell Parameters Modeling and Temperature Effect Analysis

With the wide acceptance of modeling a PV cell by a single diode, a series and parallel resistors; many researchers have discussed different mathematical forms and iterative techniques to extract the values of these model elements depending on the key parameters provided by the manufacturer datasheet. This paper avoids iterative techniques and obtains the values of the five parameters of the one diode model by developing closed form expressions. The maximum error produced by this technique is 10% when compared to the exact values of the one diode model circuit built by Spice. The 10% maximum error has occurred during the estimation of the reverse saturation current (Io) of the diode, nevertheless, it should be mentioned that even for this same parameter the model outperforms many iterative dependent works. Furthermore, this paper discusses the effect of temperature on the operation performance of PV cells. In particular, the temperature effect on the open circuit voltage, the short circuit current, the fill factor, the reverse saturation current, and the conversion efficiency was modeled and evaluated for different brand technologies

Variation in Maximum Power and Maximum Power point with different parameter analysis

Variation in Maximum power and Maximum power point i.e. voltage at which Maximum Power is observed with different parameters are studied. Parameters are insolation, temperature, series resistance, shunt resistance, and reverse saturation current of the diode. For this I-V and P-V characteristics with a variation of these parameters are analyzed. For finding out the Maximum PowerPoint, Perturb & Observe technique is used. Variation in these points is different with each parameter. All simulation work is done in MATLAB.

Electric Properties of Organic-on-Inorganic n-Si/VOPc Heterojunction

In the current study vanadyl-phthalocyanine (VOPc) thin films were deposited by vacuum evaporation on n-Si substrate resulting in an organic-on-inorganic (n-Si/VOPc) heterojunctions. Ag films were deposited as electrodes. Thicknesses of the VOPc films were in the range of 100-300 nm. The dark I-V characteristics exhibited rectification behavior. The rectification ratio (RR) decreased from 4 to 0.4 as the thickness of the VOPc film decreased. The dark I-V characteristics were simulated by modified Schokley equation and spaace-charge limited currents (SCLC) approach. Investigations were carried out to study the effect of VOPc films thickness on reverse saturation current , diode quality factor and mobility of charge carriers.

Simulations Based on Experimental Data of the Behaviour of a Monocrystalline Silicon Photovoltaic Module

The performance of monocrystalline silicon cells depends widely on the parameters like the series and shunt resistances, the diode reverse saturation current, and the ideality factor. Many authors consider these parameters as constant while others determine their values based on the I-V characteristic when the module is under illumination or in the dark. This paper presents a new method for extracting the series resistance, the diode reverse saturation current, and the ideality factor. The proposed extraction method using the least square method is based on the fitting of experimental data recorded in 2014 in Ngaoundere, Cameroon. The results show that the ideality factor can be considered as constant and equal to 1.2 for the monocrystalline silicon module. The diode reverse saturation current depends only on the temperature. And the series resistance decreases when the irradiance increases. The extracted values of these parameters contribute to the best modeling of a photovoltaic module which can help in the accurate extraction of the maximum power.