scholarly journals Estimasi Parameter Modul Surya 190 Wp Menggunakan Metode Newton Raphson

CYCLOTRON ◽  
2021 ◽  
Vol 4 (2) ◽  
Author(s):  
Abdul Hafid
Keyword(s):  
Ideality Factor ◽  
Saturation Current ◽  
Diode Ideality Factor ◽  
Newton Raphson ◽  
Reverse Saturation Current

Tulisan ini menyajikan hasil penelitian tentang estimasi parameter modul surya  tipe BLD180-72M dengan daya puncak 190 Wp menggunakan metode Newton Raphson. Dalam penelitian ini digunakan model rangkaian  ekuivalen sel surya  model satu diode. Parameter yang diestimasi adalah arus foton (photocurrent), resistansi seri  dan resistansi paralel  dari modul. Dua parameter lainnya, yaitu arus balik saturasi diode (diode reverse saturation current) dan faktor keidealan diode (diode ideality factor) tidak diestimasi tetapi diasumsikan memiliki nilai tertentu.  Dalam penelitian ini, estimasi parameter , da berhasil dilakukan  dan hasilnya konvergen, yaitu arus foton 6.7211A, resistansi seri 0.2135 Ω dan resistansi paralel sebesar 26.438 Ω.  Pada penelitian ini, diberikan juga  nilai ketiga parameter yang disebutkan untuk temperatur kerja modul  48 0C untuk bebagai tingkat penyinaran matahari. Berdasarkan kurva  daya keluaran versus tegangan dari modul surya yang diteliti, diperoleh hasil bahwa untuk iradiasi  matahari sebesar  600 W/m2, daya yang dihasilkan modul  maksimum sekitar 70 W, dan untuk iradiasi matahari sebesar 700 W/m2 daya keluaran maksimumnya sekitar 102 W, dan untuk iradiasi  matahari 1000 W/m2,, modul surya tipe BLD180-72M menghasilkan daya keluaran  puncak sekitar 198 W

scholarly journals Simulations Based on Experimental Data of the Behaviour of a Monocrystalline Silicon Photovoltaic Module

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Abraham Dandoussou ◽  
Martin Kamta ◽  
Laurent Bitjoka ◽  
Patrice Wira ◽  
Alexis Kuitché
Keyword(s):  
Experimental Data ◽  
Ideality Factor ◽  
Extraction Method ◽  
Series Resistance ◽  
Least Square Method ◽  
Monocrystalline Silicon ◽  
Least Square ◽  
Photovoltaic Module ◽  
Saturation Current ◽  
Reverse Saturation Current

The performance of monocrystalline silicon cells depends widely on the parameters like the series and shunt resistances, the diode reverse saturation current, and the ideality factor. Many authors consider these parameters as constant while others determine their values based on the I-V characteristic when the module is under illumination or in the dark. This paper presents a new method for extracting the series resistance, the diode reverse saturation current, and the ideality factor. The proposed extraction method using the least square method is based on the fitting of experimental data recorded in 2014 in Ngaoundere, Cameroon. The results show that the ideality factor can be considered as constant and equal to 1.2 for the monocrystalline silicon module. The diode reverse saturation current depends only on the temperature. And the series resistance decreases when the irradiance increases. The extracted values of these parameters contribute to the best modeling of a photovoltaic module which can help in the accurate extraction of the maximum power.

Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range

1999 ◽  
Vol 607 ◽  
Author(s):  
L. Bürkle ◽  
F. Fuchs ◽  
R. Kiefer ◽  
W. Pletschen ◽  
R. E. Sah ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cutoff Wavelength ◽  
Saturation Current ◽  
Diffusion Limited ◽  
Saturation Current Density ◽  
Out Of Plane ◽  
Reverse Saturation Current ◽  
The Magnetic Field ◽  
Diode Current

AbstractInAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.711μm show adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D*= 1 x 1012 cmv√Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodesare limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes

scholarly journals The Optical Diode Ideality Factor Enables Fast Screening of Semiconductors for Solar Cells

Solar RRL ◽  
2018 ◽  
Vol 2 (12) ◽  
pp. 1800248 ◽  
Author(s):  
Finn Babbe ◽  
Leo Choubrac ◽  
Susanne Siebentritt
Keyword(s):  
Solar Cells ◽  
Ideality Factor ◽  
Fast Screening ◽  
Diode Ideality Factor ◽  
Optical Diode

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach

2012 ◽  
Vol 106 ◽  
pp. 76-79 ◽  
Author(s):  
Jens Müller ◽  
Karsten Bothe ◽  
Sandra Herlufsen ◽  
Helge Hannebauer ◽  
Rafel Ferré ◽  
...  
Keyword(s):  
Current Density ◽  
Saturation Current ◽  
Saturation Current Density ◽  
Current Density Imaging ◽  
Reverse Saturation Current

Extraction of the Parameters from I-V Data for Nonideal Photodetectors: A Comparative Study

2005 ◽  
Vol 494 ◽  
pp. 83-88
Author(s):  
A. Vasić ◽  
P. Osmokrović ◽  
B. Lončar ◽  
S. Stanković
Keyword(s):  
Comparative Study ◽  
Ideality Factor ◽  
Series Resistance ◽  
Semiconductor Devices ◽  
Saturation Current ◽  
Made In

Parameters that characterize semiconductor devices are often determined with difficulty, and their values very frequently depend on the method used for measurements and analysis. The extraction of diode parameters from the obtained I-V measurements could be complicated by their dependence on the voltage and the presence of series resistance. Therefore, an interpretation of the experimental I-V data must be very carefully made. In this paper, some methods for obtaining diode parameters such as saturation current, ideality factor and series resistance are presented. An evaluation of these methods based on their application for the extraction of the relevant parameters of photodiodes is also performed. Some of the methods that produce reliable and reproducible results are evaluated based on the experimentally obtained results, and in the view of the complexity of the used methods and their limitations.

The study on saturation current and ideality factor of CdTe solar cell based on CdS window layer deposited with hydrogen peroxide

2019 ◽  
Vol 34 (11) ◽  
pp. 115025 ◽  
Author(s):  
Bin Lv ◽  
Bo Yan ◽  
Pinggen Cai ◽  
Fan Gao ◽  
Ziran Ye ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Solar Cell ◽  
Ideality Factor ◽  
Window Layer ◽  
Saturation Current ◽  
Cdte Solar Cell
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