Analytical Drain-Current Model and Surface-Potential Calculation for Junctionless Cylindrical Surrounding-Gate MOSFETs
2021 ◽
Vol 15
◽
pp. 1394-1399
Keyword(s):
In this paper, we propose an analytical drain-current model for long-channel junctionless (JL) cylindrical surrounding-gate MOSFET (SRG MOSFET). It is based on surface-potential solutions obtained from Poisson’s equation using some approximations and separate conditions. Furthermore, analytical compact expressions of the drain-current have been derived for deep depletion, partial depletion, and accumulation mode. The confrontation of the model with TCAD simulation results, performed with Silvaco Software, proves the validity and the accuracy of the developed model
2018 ◽
Vol 55
◽
pp. 75-81
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2013 ◽
Vol 27
(1)
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pp. 99-108
Keyword(s):
2012 ◽
Vol 59
(12)
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pp. 3292-3298
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2013 ◽
Vol 13
(4)
◽
pp. 361-366
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Keyword(s):
2016 ◽
pp. 1-14
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Keyword(s):
2018 ◽
Vol 1141
◽
pp. 012066
Keyword(s):