Plexciton Modes Guided by an Exciton Slab in a Columnar Thin Film

In this study, we reported plasmon-exciton coupling for excitation the surface plexciton in columnar thin film with a central exciton slab using the transfer matrix method in Kretschmann configuration. The optical absorption spectra for surface plasmon polariton, surface exciton and surface plexciton was investigated at different structural parameters in proposed structure. The characteristics of surface optical modes were analyzed and there was an anticrossing behavior between polariton branches of plexciton spectra. Localization of surface modes on interfaces and hybridization between plasmons and excitons at both interfaces of exciton slab were proved by the time-averaged Poynting vector. We found that the types of coupling regimes between plasmons and excitons from weak to strong could be achieved. We found a high Rabi splitting energy 840 meV corresponding to the time period 5 fs which includes to the fast energy transfer between surface plasmon polaritons and surface excitons.

Phonon Coupling and Dielectric Response in 2D Semiconductor

The impact of phonon and their surrounding environment on exciton and its complexes were investigated in monolayer WSe2 semiconductor. Phonon up-conversion has been studied in past for conventional III–V semiconductors, but its role in two-dimensional layered transition metal dichalcogenides has rarely been explored. We investigated the photoluminescence up-conversion mechanism in WSe2 monolayer and found that a lower energy photon gain energy upto 64[Formula: see text]meV to be up-converted to emission photon at room temperature. Moreover, the phonon-exciton coupling mechanism has also been investigated and the role of dielectric screening has been explored to get complete insight of coulomb’s interaction in these electron-hole pairs. Investigations of charge carrier’s lifetime reveal that boron nitride encapsulated monolayer has shorter recombination time as low as 41 ps as compared to a bare monolayer on SiO2 substrate. These results are very promising for realizing spintronics-based application from two-dimensional layered semiconductors.