transparent oxide semiconductor
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scholarly journals Hydrogen-driven surface amorphization of the transparent oxide semiconductor thin-films for photovoltaic applications

2021 ◽  
pp. 149702
Author(s):  
Seohan Kim ◽  
Janghee Yoon ◽  
Sungmin Park ◽  
Joonho Bang ◽  
Pungkeun Song
Keyword(s):  
Thin Films ◽  
Oxide Semiconductor ◽  
Semiconductor Thin Films ◽  
Photovoltaic Applications ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor

scholarly journals High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding ∼3000 S cm−1

2020 ◽  
Vol 116 (2) ◽  
pp. 022103 ◽  
Author(s):  
Mian Wei ◽  
Anup V. Sanchela ◽  
Bin Feng ◽  
Yuichi Ikuhara ◽  
Hai Jun Cho ◽  
...  
Keyword(s):  
Oxide Semiconductor ◽  
Electrical Conducting ◽  
Deep Ultraviolet ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
La Doped

Solution Processed High-k Lanthanide Oxides for Low Voltage Driven Transparent Oxide Semiconductor Thin Film Transistors

2019 ◽  
Vol 35 (4) ◽  
pp. 901-908 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Mi Jang ◽  
Sunho Jeong ◽  
Ji-Yoon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Semiconductor ◽  
Lanthanide Oxides ◽  
Solution Processed ◽  
High K ◽  
Transparent Oxide ◽  
Semiconductor Thin Film ◽  
Transparent Oxide Semiconductor

scholarly journals Buffer layer-less fabrication of a high-mobility transparent oxide semiconductor, La-doped BaSnO3

2019 ◽  
Vol 7 (19) ◽  
pp. 5797-5802 ◽  
Author(s):  
Anup V. Sanchela ◽  
Mian Wei ◽  
Joonhyuk Lee ◽  
Gowoon Kim ◽  
Hyoungjeen Jeen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Hall Mobility ◽  
High Mobility ◽  
Buffer Layers ◽  
Oxide Semiconductor ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
La Doped

Hall mobility of La-doped BaSnO3 films was improved without any buffer layers if the films are grown under O3 atmospheres.

Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

2019 ◽  
Vol 7 (21) ◽  
pp. 6332-6336 ◽  
Author(s):  
Makoto Minohara ◽  
Naoto Kikuchi ◽  
Yoshiyuki Yoshida ◽  
Hiroshi Kumigashira ◽  
Yoshihiro Aiura
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Hole Mobility ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Oxide Semiconductor ◽  
Practical Applications ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor ◽  
P Type

Stannous oxide, SnO, is a promising material for practical applications as a p-type transparent oxide semiconductor. The hole mobility of SnO epitaxial films grown by pulsed laser deposition can be improved by reducing the growth temperature.

Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a-InGaZnO at 45 °C

2018 ◽  
Vol 10 (29) ◽  
pp. 24590-24597 ◽  
Author(s):  
Juan Paolo S. Bermundo ◽  
Yasuaki Ishikawa ◽  
Mami N. Fujii ◽  
Hiroshi Ikenoue ◽  
Yukiharu Uraoka
Keyword(s):  
Oxide Semiconductor ◽  
Transparent Oxide ◽  
Transparent Oxide Semiconductor
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