energy anisotropy
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2021 ◽  
Vol 23 (2) ◽  
pp. 59-62
Author(s):  
Yurov V.M. ◽  
◽  
Goncharenko V.I. ◽  
Oleshko V.S. ◽  
◽  
...  

In this work, we show how to calculate the surface energy anisotropy and the thickness of the surface layer of some magnetic nanostructures. As an example, the minerals of magnetite, ulvespineli, ilmenite andpseudobrukite, which have different crystal structures, are considered.


2020 ◽  
Vol 29 (12) ◽  
pp. 128201
Author(s):  
Yu-Hao Song ◽  
Ming-Tao Wang ◽  
Jia Ni ◽  
Jian-Feng Jin ◽  
Ya-Ping Zong

2020 ◽  
Vol 51 (12) ◽  
pp. 6387-6405
Author(s):  
Shanmukha Kiran Aramanda ◽  
Sumeet Khanna ◽  
Sai Kiran Salapaka ◽  
Kamanio Chattopadhyay ◽  
Abhik Choudhury

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Lei Wang ◽  
Jeffrey J. Hoyt ◽  
Nan Wang ◽  
Nikolas Provatas ◽  
Chad W. Sinclair

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Monica Bollani ◽  
Marco Salvalaglio ◽  
Abdennacer Benali ◽  
Mohammed Bouabdellaoui ◽  
Meher Naffouti ◽  
...  

AbstractLarge-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of $$\sim$$~1/60000 and self-assembled $$\sim$$~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits.


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