Simple construction of deep-red hexaazatrinaphthylene-based thermally activated delayed fluorescence emitters for efficient solution-processed OLEDs with a peak at 692 nm

Solution-processable deep-red TADF emitters are simply constructed through a catalyst-free nucleophilic substitution reaction, and enable high-performance OLEDs with an EQE of 4.8% and electroluminescence emission peak at 692 nm.

High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.

Frequency Dependence of Electroluminescence Measurement in LDPE

A good insulator for high voltage cable has low dielectric loss, reasonable flexibility and thermo-mechanically stable. However, prolonged application of electrical stresses on the cable will degraded the cable; physically and morphologically. Electrical degradation in high voltage cable can be detected using electroluminescence (EL) method. Electroluminescence is a phenomenon that occurs when the atoms of a material are being excited due to the application of and external high electrical stresses. There are several external factors that affect the behaviour of electroluminescence emission such as, applied voltage, applied frequency, ageing of material and types of materials. . In this paper, the EL measurement is employed to determine the effect of applied frequency on virgin LDPE at fixed and varying applied voltage. It can be observed that EL emission increases as applied frequency increases with increasing voltage applied. However, interesting EL behaviour is observed when varying frequency is applied from 10 Hz to 100 Hz.

Highly efficient, deep-red organic light-emitting devices using energy transfer from exciplexes

Record-breaking highly efficient, deep-red phosphorescent OLEDs are developed. The optimized device exhibits an external quantum efficiency of nearly 18% and an electroluminescence emission wavelength of 670 nm.